Nuclear component with a metal substrate, method for the production thereof by dli-mocvd, and uses of same for controlling oxidation/hydridation

ABSTRACT

The invention also relates to the use of the nuclear component for combating oxidation and/or hydriding.

TECHNICAL FIELD

The present invention relates to the field of materials used in thenuclear field, in particular materials intended to exhibit the bestpossible resistance to the physicochemical conditions encountered undernominal conditions and during a nuclear reactor accident, for instancein a pressurized water reactor (PWR) or a boiling water reactor (BWR).

The invention relates more particularly to a nuclear component, to theprocess for manufacturing same and to the uses thereof against oxidationand/or hydriding.

TECHNICAL BACKGROUND

The constituent zirconium alloy of current nuclear fuel claddingsbecomes oxidized on contact with water which constitutes the coolant forPWR or BWR nuclear reactors.

Since the oxide form is fragile and the uptake of hydrogen associatedwith oxidation leads to the precipitation of zirconium hydrides whichare embrittling, the service life of the claddings is partly limited bythe maximum acceptable thickness of oxide and the associated content ofabsorbed hydrogen. To ensure good residual mechanical properties of thecladding directed toward ensuring optimum confinement of the nuclearfuel, the residual thickness of healthy and ductile zirconium alloy mustbe sufficient and/or the fraction of hydrides must be sufficientlylimited to ensure good residual mechanical properties of the claddingdirected toward ensuring optimum confinement of the nuclear fuel.

The possibility of limiting or retarding such oxidation and/or hydridingmay thus prove to be crucial under the conditions of an accident.

These conditions are reached, for example, in the case of hypotheticalaccident scenarios such as RIA (“Reactivity Insertion Accident”) or LOCA(“Loss of Primary Coolant Accident”), or even under conditions ofdewatering of the spent fuel storage pool. They are among otherscharacterized by high temperatures which are generally greater than 700°C., in particular between 800° C. and 1200° C., and which may be reachedwith a high rate of temperature increase. At such temperatures, thecoolant is in the form of steam.

Oxidation under the conditions of an accident is much more critical thanunder the conditions of normal nuclear reactor functioning, since thedeterioration of the cladding, which is the first barrier forconfinement of the fuel, is more rapid and the associated risks aregreater. These risks are among others the following:

emission of hydrogen;

embrittlement of the cladding at high temperature by oxidation or even,under certain conditions, hydriding of the cladding;

embrittlement of the cladding by quenching, caused by the abruptdecrease in temperature during the massive introduction of water for thesecuring of the nuclear reactor core;

low mechanical strength of the cladding after quenching or cooling, inthe case among others of handling operations after an accident,aftershocks of earthquakes, etc.

Given these risks, it is essential to limit as far as possible theoxidation and/or hydriding of the cladding at high temperature, or evenat very high temperature, so as to improve the safety of nuclearreactors among others using water as coolant.

The very high temperatures are situated at the extreme limit or evenbeyond that of the high temperatures comprised between 700° C. and 1200°C. that are set by the accident regulatory conditions.

Now, the regulatory criteria governing the design-basis accidentsaccording to the scenario of LOCA type defined in the 1970s stipulatedthat the maximum temperature of the cladding should not exceed 1304° C.(2200° F.) and stipulated a maximum degree of “ECR” oxidation of 17%.

The degree of “ECR” (“Equivalent Cladding Reacted”) oxidation is thepercentage of thickness of metal cladding transformed into zirconia(ZrO₂) resulting from the oxidation of the zirconium contained in thenuclear fuel cladding, assuming that all the oxygen that has reactedforms stoichiometric zirconia.

To take into account the additional embrittling effect associated withthe hydriding of the cladding in service, this degree of acceptableresidual “ECR” oxidation may now be substantially less than 17% undercertain conditions, for instance a hydridized cladding in service of upto several hundred ppm by mass, which corresponds in practice to adegree of oxidation of the cladding which must not exceed a few minutesat 1200° C.

Improvement in the resistance to oxidation and/hydriding at very hightemperature would advantageously make it possible to obtain additionalsafety margins, among others by proportionately preventing or retardingthe deterioration of the cladding in the event of worsening orpersistence of the accident situation.

DESCRIPTION OF THE INVENTION

One of the aims of the invention is thus to prevent or attenuate one ormore of the drawbacks described above, by proposing a nuclear componentand the process for manufacturing same which improves the resistance tooxidation and/or hydriding, among others in the presence of water vapor.

Another aim of the invention may be to improve this resistance tooxidation and/or hydriding at high temperature between 700° C. and 1200°C., or even at very high temperature above 1200° C.; among others whenthese temperatures are reached with a temperature increase rate which iscomprised between 0.1° C./second and 300° C./second.

Another aim of the invention may be to improve the oxidation and/orhydriding resistance time, beyond which time the integrity of thenuclear component, in particular the nuclear fuel confinement, is nolonger ensured.

Another aim of the invention may be to improve the potential forindustrialization of the manufacturing process, among others byproposing a process that is not only versatile but also economical andmore environmentally friendly.

The present invention thus relates to a process for manufacturing anuclear component via the method of chemical vapor deposition of anorganometallic compound by direct liquid injection (DLI-MOCVD), thenuclear component comprising:

i) a support containing a substrate based on a metal chosen fromzirconium, titanium, vanadium, molybdenum or base alloys thereof, thesubstrate being coated or not with an interposed layer placed betweenthe substrate and at least one protective layer;

ii) said at least one protective layer coating said support and composedof a protective material comprising chromium chosen from a partiallymetastable chromium comprising a stable chromium crystalline phase and ametastable chromium crystalline phase, an amorphous chromium carbide, achromium alloy, a carbide of a chromium alloy, a chromium nitride, achromium carbonitride, a mixed chromium silicon carbide, a mixedchromium silicon nitride, a mixed chromium silicon carbonitride, ormixtures thereof;

the process comprising the following successive steps:

a) vaporizing a mother solution containing a hydrocarbon-based solventfree of oxygen atoms, a precursor of bis(arene) type comprisingchromium; and containing, where appropriate, an additional precursor, acarbon incorporation inhibitor or a mixture thereof; the precursorshaving a decomposition temperature comprised between 300° C. and 600°C.;

b) in a chemical vapor deposition reactor in which is located saidsupport to be covered and the atmosphere of which is at a depositiontemperature comprised between 300° C. and 600° C. and at a depositionpressure comprised between 13 Pa and 7000 Pa (or even from 130 Pa to4000 Pa); introducing the mother solution vaporized in step a) and thendepositing said at least one protective layer onto said support, thisdeposition being brought about by this introduction of the mothersolution vaporized in step a).

More particularly, the protective material comprising chromium is chosenfrom a chromium alloy, a carbide of a chromium alloy, a chromiumnitride, a chromium carbonitride, a mixed chromium silicon carbide, amixed chromium silicon nitride, a mixed chromium silicon carbonitride,or mixtures thereof.

In comparison with the processes of the prior art, the manufacturingprocess of the invention among others improves the resistance of anuclear component with respect to oxidation and/or hydriding, while atthe same time offering a deposition process with great potential forindustrialization enhanced by the possibility of recycling.

The manufacturing process of the invention uses a method of chemicalvapor deposition of an organometallic compound by direct liquidinjection (known as DLI-MOCVD, according to the English acronym for“Direct Liquid Injection-Metal Organic Chemical Vapor Deposition”). Thismethod is described, for example, in the following documents: “F. Maury,A. Douard, S. Delclos, D. Samelor, C. Tendero; Multilayer chromium basedcoatings grown by atmospheric pressure direct liquid injection CVD,Surface and Coatings Technology, 204 (2009) 983-987” (reference [1]),“A. Douard, F. Maury; Nanocrystalline chromium-based coatings depositedby DLI-MOCVD under atmospheric pressure from Cr(CO)6, Surface andCoatings Terminology, 200 (2006) 6267-6271” (reference [2]), WO2008/009714 (reference [3]) and WO 2008/009715 (reference [ ]).

As a reminder, the principle of the DLI-MOCVD technique is to directlyintroduce, into a chemical vapor deposition chamber, under continuous orpulsed conditions, a precursor of the metal to be deposited in vaporizedform.

With this aim, starting with a feed tank under pressure (for example ata pressure of 3×10⁵ Pa of an inert gas), a mother solution containing atleast one organometallic compound as precursor is introduced into anevaporator. It is then split up into microdroplets to form an aerosolwhich is flash-vaporized. Flash evaporation consists in rapidlyvaporizing a compound outside the pressure and temperature conditionspredicted by its saturated vapor pressure law. The evaporator is heatedto a temperature such that the precursor and its solvent are vaporized,without, however, bringing about decomposition at this stage. Thetemperature is conveniently comprised between the boiling point of thesolvent and the decomposition temperature of the precursor and,incidentally, that of the solvent, for example 200° C.

The parameters for injection of the mother solution are preferably setusing a computer program. They are adjusted so as to obtain a mist ofvery fine and numerous droplets, in order to obtain satisfactory flashevaporation under reduced pressure. The liquid injection thusconstitutes a well-controlled source of organometallic precursor, whichdoes not limit the possibilities for optimization of the parameters ofthe coating deposition process.

This flexibility in the formulation of the mother solution makes itpossible to deposit a wide variety of coatings with a single physicalvapor deposition device. The composition, structure, geometry andphysicochemical characteristics of a coating may in particular be brokendown into numerous variants, among others for a coating such as aprotective layer, an interposed layer or a liner.

The vaporized mother solution is entrained by a stream of inert gas fromthe evaporator to the deposition zone of the reactor in which thesubstrate to be covered was placed. The carrier gas used is preferablypreheated to the temperature of the evaporator to obtain more efficientvaporization. Said gas is inert so as not to react with the reagentspresent, for example by oxidizing them. Nitrogen is generally chosen forits low cost, but helium, which benefits from better thermalconductivity, or argon, which has greater protective power, may also beemployed.

According to the manufacturing process of the invention, the chemicalvapor deposition reactor chamber is heated to a deposition temperaturecomprised between 300° C. and 600° C. For this temperature range, theorganometallic precursor, in particular of bis(arene)metal type,decomposes without degrading the solvent, so as to prevent as much aspossible the production of reaction byproducts that are liable topollute the chamber by becoming deposited on the reactor walls or evenon the substrate. If the substrate to be covered is metallic, thetemperature may be limited to the resistance temperature of the metal soas to prevent it from undergoing any deformation or phasetransformation. For example, when the substrate is constituted of analloy of zirconium, the deposition temperature can he comprised between350° C. and 550° C. The reduced deposition temperature for the DLI-MOCVDprocess is an advantage when compared with other vapor chromization CVDprocesses which use gaseous transition metal halides and operate attemperatures which may reach 900° C.

The chemical vapor deposition reactor is placed under reduced pressure,at which the main steps of the deposition are performed, from thevaporization of the mother solution up to the optional collection of theeffluent obtained on conclusion of the manufacturing process. Thereduced pressure is generally from a few Torr to a few tens of Torr.They are thus moderately reduced pressures with regard to the pressuresfrom about 10⁻³ Torr to 10⁻⁴ Torr of industrial PVD processes whichrequire high vacuum equipment.

One of the advantages of the DLI-MOCVD deposition process for coating anuclear component with a protective layer is that said layer can bedeposited on the inner surface and/or the outer surface of the substratecoated or not with an interposed layer.

Protection of the inner layer of a nuclear component via themanufacturing process of the invention is particularly advantageous whenthe substrate to be coated is of large size, for example in the case ofa nuclear fuel tubular cladding 1 cm in diameter and about 4 m long. Itpartly solves the oxidation and/or hydriding problems encountered in thenuclear sector.

Specifically, by way of example, during a loss of primary coolantaccident (LOCA) scenario in second and third generation reactors, azirconium alloy fuel cladding is subjected to a sudden rise in internaltemperature and pressure, which lead to ballooning and to acceleratedoxidation of the cladding. The combination of these two phenomena maylead to bursting of the cladding, and thus to rupture of the nuclearfuel confinement and of the fission products it contains.

The inner surface of the cladding thus exposed is particularly sensitiveto oxidation and to secondary hydriding, namely massive localizedhydriding which results from the depletion in oxygen of the water vaporatmosphere via the confinement effect. The cladding may then becomedegraded by cracking during the quenching caused by the rewatering ofthe accident-hit core, or even during post-quenching mechanical stresses(earthquake aftershocks, handling, etc.). This degradation may possiblylead to a loss of efficiency of cooling of the fuel assemblies andprogress toward an uncontrolled degraded situation (“seriousaccidents”).

Coating of the inner surface of a nuclear fuel cladding with at leastone protective layer aids in limiting, retarding or even preventinginternal oxidation and/or secondary hydriding under LOCA conditions.

It is also advantageous for combating secondary hydriding under nominalconditions in the event of incidental piercing of the cladding and forcombating the problem of the fuel pellet-cladding interaction.

The substrate onto which is deposited at least one protective layer viathe manufacturing process of the invention is composed of a metal or ofone of its base alloys thereof.

Preferentially, the substrate is composed of zirconium or of azirconium-based alloy. The zirconium-based alloy may comprise, byweight:

from 0% to 3% of niobium;

from 0% to 2% of tin;

from 0% to 0.5% of iron;

from 0% to 0.2% of chromium;

from 0% to 0.2% of nickel;

from 0% to 0.2% of copper;

from 0% to 1% of vanadium;

from 0% to 1% of molybdenum;

from 0.05% to 0.2% of oxygen.

The zirconium alloy may in particular be chosen from an alloy meetingthe constraints of the nuclear field, for example Zircaloy-2,Zircaloy-4, Zirlo™, Optimized-Zirlo™ or M5™. The compositions of thesealloys are such that they comprise, by weight, for example:

-   -   Zircaloy-2 alloy: 1.20% to 1.70% of Sn; 0.07% to 0.20% of Fe;        0.05% to 1.15% of Cr; 0.03% to 0.08% of 900 ppm to 1500 ppm of        O; the remainder is zirconium.    -   Zircaloy-4 alloy: 1.20% to 1.70% of Sn; 0.18% to 0.24% of Fe;        0.07% to 1.13% of Cr; 900 ppm to 1500 pm of O; less than 0.007%        of Ni; the remainder is zirconium.    -   Zirlo™ alloy: 0.5% to 2.0% of Nb; 7% to 1.5% of Sn; 0.07% to        0.28% of at least one element chosen from Fe, Ni, Cr; up to 200        ppm of C; the remainder is zircon:um.    -   Opti-mized-ZirIo™ alloy: 0.8% to 1.2% of Nb; 0.6% to 0.9% of Sn;        0.090% to 0.13% of Fe; 0.105% to 0.145% of O; the remainder is        zirconium.    -   M5™ alloy: 0.8% to 1.2% of Nb; 0.090% to 0.149% of O; 200 ppm to        1000 ppm of Fe; the remainder is zirconium.

Preferentially, the zirconium-based alloy is Zircaloy-2 or Zircaloy-4.

According to a particular geometry, the nuclear component manufacturedvia the process of the invention may comprise an interposed layerpositioned between the substrate and at least one protective layer.

In this embodiment, the support is formed by the combination of thesubstrate and of the interposed layer.

The interposed layer may serve as a diffusion barrier.

When the substrate comprises zirconium or an alloy of zirconium, theinterposed layer constitutes in particular a diffusion barrier whichlimits, indeed even prevents:

the diffusion of the chromium from the external layer toward thezirconium-based internal layer, which results in an acceleratedconsumption of the external layer(s) in addition to its oxidation togive chromic oxide;

the formation of a eutectic above 1330° C. approximately, which maypotentially harm the mechanical strength of the component and itsability to be cooled.

The interposed layer may be deposited onto the substrate via a widevariety of deposition methods, more particularly by performing aDLI-MOCVD deposition or by plasma-enhanced chemical vapor deposition(CVD), onto the outer surface of the substrate and/or onto its innersurface.

These two methods may be used when the interposed layer is depositedonto the outer surface of the substrate.

On the other hand, only deposition by DLI-MOCVD makes it possible tocover the inner surface of the substrate, generally when interposedlayer is composed of a metallic material. The operating conditions fordeposition DLI-MOCVD are then those described elsewhere in the presentdescription. In particular, the precursor comprising an interposedmaterial chosen from chromium, tantalum, molybdenum, tungsten, niobiumor vanadium may be of the bis(arene) type according to the variantsindicated in the present description.

The plasma-enhanced CVD deposition method is, for its part, only usedfor deposition onto the outer surface of the substrate, generally whenthe interposed layer is composed of a ceramic material. Preferentially,the interposed layer is then deposited onto the outer surface of thesubstrate by performing the plasma-enhanced CVD deposition using amixture comprising at least one titanium, aluminum or silicon halide anda gaseous nitrogen precursor, as illustrated, for example, by thedocument. “S. Anderbouhr, V. Ghetta, E. Blanquet, C. Chabrol, F.Schuster, C. Bernard, R. Madar; LPCVD and PACVD (Ti,Al)N films:morphology and mechanical properties; Surface and Coatings Technology,Volume 115, Issues 2-3, Jul. 18, 1999, pages 103-110” (reference [5]).

Preferentially, the titanium, aluminum or silicon halide is a titanium,aluminum or silicon chloride. It is chosen, for example, from TiCl₄,AlCl₃ and SiCl₄ or mixtures thereof.

Preferentially, the interposed layer may comprise at least oneinterposed material chosen from chromium, tantalum, molybdenum,tungsten, niobium, vanadium, alloys thereof, a titanium nitride, atitanium carbonitride, a mixed titanium silicon nitride, a mixedtitanium silicon carbide, a mixed titanium silicon carbonitride, a mixedtitanium aluminum nitride, or mixtures thereof.

The interposed material composed of a titanium nitride, a titaniumcarbonitride, a mixed titanium silicon nitride, a mixed titanium siliconcarbide, a mixed titanium silicon carbonitride or a mixed titaniumaluminum nitride is a ceramic interposed material: each of thesematerials is generally denoted, respectively, as TiN, TiCN, TiSiN,TiSiC, TiSiCN or TiAlN, without this implying any stoichiometry; thenitrogen, carbon, silicon and aluminum atoms generally being insertionsinto the titanium metal matrix.

Preferentially, the thickness of the interposed layer is from 1 μm to 5μm.

According to another particular geometry, the nuclear componentmanufactured via the process of the invention may further comprise aliner placed on the inner surface of said support. This liner generallyacts as a diffusion barrier or improves the robustness of the nuclearcomponent with respect to possible chemical or mechanical interactions.

Said at least one protective layer may be an outer protective layerwhich coats the outer surface of said support and/or, when the nuclearcomponent comprises an inner volume which may or may not be open, aninner protective layer which coats the inner surface of said supportcoated or not coated with the liner.

A nuclear component which comprises an inner volume is, for example, anuclear fuel cladding, a guide tube, a plate fuel (the inner volume ofwhich is not open, it nevertheless being possible for this component tobe manufactured by assembling several parts that may comprise a surfaceonto which the inner protective layer is deposited, these surfacesforming—after assembly of the parts—the inner surface of the supportcovered with the protective layer), or an absorber rod.

The liner does not necessarily constitute a coating: it may be a partthat is assembled or fitted subsequently into the nuclear component. Itmay also be obtained by hot coextrusion during the manufacture of thesubstrate.

Alternatively, the liner may be deposited, at a deposition temperaturecomprised between 200° C. and 400° C., onto the inner surface of thesupport by chemical vapor deposition of an organometallic compound(MOCVD) or DLI-MOCVD with, as precursor(s), a titanium amide and furthera precursor comprising silicon, a precursor comprising aluminum and/or aliquid additive comprising nitrogen as precursor if the material ofwhich the liner is composed comprises, respectively, silicon, aluminumand/or nitrogen.

The MOCVD deposition method is described, for example, for the titaniumhomolog which may be chromium for this MOCVD process in the document “F.Ossola, F. Maury: MOCVD route to chromium carbonitride thin films usingCr(NEt2)4 as single-source precursor: growth and mechanism., Adv. Mater.Chem. Vap. Deposition, 3 (1997) 137-143.” (reference [6]).

Preferentially, during the deposition of the liner by MOCVD orDLI-MOCVD, the liquid additive comprising nitrogen is ammonia, oroptionally a molecular precursor comprising a titanium-nitrogen bond. Ahigh concentration of the liquid additive comprising nitrogen generallypromotes the formation of a nitride at the expense of a carbide, thecarbon of which comes from the organometallic precursors.

The MOCVD or DLI-MOCVD deposition temperature may be comprised between300° C. and 400° C. so as to promote as best as possible the proportionof the amorphous structure in the material of which the liner composedand thus the performance of the liner as a diffusion barrier.

Alternatively, the MOCVD or DLI-MOCVD deposition temperature may bebetween 400° C. and 50° C., so as to increase the deposition rate.

Preferentially, the material of which the liner is composed comprisestitanium nitride, a titanium carbonitride, a mixed titanium siliconnitride, a mixed titanium silicon carbide, a mixed titanium siliconcarbonitride, a mixed titanium aluminum nitride, or mixtures thereof.

The liner generally has a thickness of from 1 μm to 10 μm.

Other deposition methods may also be suitable for depositing the liner,for instance CVD, plasma CVD or DLICVD deposition, as illustrated,respectively, by the documents “Jin Zhang, Qi Xue and Songxia Li,Microstructure and corrosion behavior of TiC/Ti(CN)/TiN multilayer CVDcoatings on high strength steels. Applied Surface Science, 2013. 280:pages 626-631” (reference [7]), “A. Weber, C.-P. Klages, M. E. Gross, R.M. Charatan and W. L. Brown, Formation Mechanism of TiN by Reaction ofTetrakis(dimethylamido)-Titanium with Plasma-Activated Nitrogen. Journalof The Electrochemical Society, 1995. 142(6): pages L79-L82.” (reference[8]) or “Y. S. Li, S. Shimada, H. Kiyono and A. Hirose, Synthesis ofTi—Al—Si—N nanocomposite films using liquid injection PECVD fromalkoxide precursors. Acta Materialia, 2006. 54 (8): pages 2041-2048”(reference [9]).

In order to deposit at least one protective layer onto the support orthe substrate, the manufacturing process of the invention comprises twosteps in its general embodiment:

a step a) of vaporization of the mother solution comprising theprecursor(s) of the protective layer,

a step b) of deposition of the vaporized mother solution, during whichthe protective layer is formed on the substrate.

Step a) of the vaporization of the mother solution is preferentiallyperformed at a vaporization temperature comprised between 120° C. and220° C.

The mother solution contains a solvent, a precursor of bis(arene) typecomprising chromium; where appropriate, an additional precursor and acarbon incorporation inhibitor.

The choice of the solvent contained in the mother solution generallysatisfies several criteria.

First, the boiling point of the solvent is less than the temperature ofthe evaporator in order to make possible flash evaporation in theevaporator. It does not contain any oxygen, to prevent the oxidation ofthe deposits by cracking. It is chemically inert with respect to theprecursor solution and is liquid under standard temperature and pressureconditions, namely, according to the present description, atmosphericpressure and a temperature of 25° C. Finally, the solvent does notdecompose significantly in the reactor, so as to be recovered in theeffluent leaving the reactor and to avoid or limit any pollution.

For these reasons among others, the solvent of the mother solution is ahydrocarbon-based solvent, i.e. it is composed solely of carbon andhydrogen.

Preferably, the solvent belongs to a chemical family similar to that ofthe ligands of at lust one precursor compound, for example the precursorof bis(arene) type comprising chromium belonging to the aromatichydrocarbon (or arene) family. This is because, during the passagethrough the reactor, this precursor decomposes thermally, releasing itsligands one after the other. The reaction byproducts are thusessentially free arenes, which mix all The better with the solvent whenthey are chemically similar or even identical to it. As a result, thecompounds collected in the effluent leaving the reactor (precursor orunconsumed reagent, byproducts of DLI MOCVD reaction and solvent) aregenerally all aromatic hydrocarbons.

Preferentially, the solvent is thus a monocyclic aromatic hydrocarbon,which is liquid under standard conditions, with a boiling point below150° C. and a decomposition temperature of greater than 600° C. Evenmore preferentially, it is chosen from benzene, or a benzene substitutedwith one or more identical or different groups chosen independently frommethyl, ethyl and isopropyl groups. Even more preferentially, thesolvent is toluene, mesitylene (1,3,5-trimethylbenzene) or ethylbenzene.It is also possible to use a mixture of these compounds as solvent.

One of the main constituents of the mother solution is a precursor ofbis(arene) type comprising chromium, and, where appropriate, anadditional precursor.

Depending on the composition chosen for the mother solution, variousprotective materials described below may be deposited by decompositionof the precursors during the deposition step b). Since all theprotective materials contain chromium, the mother solution contains atleast the solvent and the precursor of bis(arene) type comprisingchromium, the concentration of which may be chosen within a wide range.This concentration has an influence mainly on the deposition rateaccording to step b): the more the mother solution is concentrated inprecursor, the higher the growth rate of the coating.

The concentration in the mother solution of the precursor of bis(arene)type comprising chromium may be comprised between 0.1 mol·L⁻¹ and 4.4mol·L⁻¹ (concentration of the pure precursor), generally between 0.1mol·L⁻¹ and 1 mol·L⁻¹, typically 0.35 mol·L⁻¹.

Besides the precursors of the protective layer and the solvent, themother solution may also comprise a carbon incorporation inhibitor whichprevents or limits the deposition of a protective material comprisingcarbon: such a material may be a carbide, a mixed carbide, acarbonitride or a mixed carbonitride, these materials possiblycomprising, for example, as atomic percentages, 35% of carbon andoptionally 2% to 3% of oxygen often localized on the surface of theprotective layer.

A small amount of carbon may occasionally be deposited with the chromiumduring step b), without, however, forming a carbide, even in thepresence of the inhibitor.

The inhibitor is a nucleophilic compound, generally a chlorine-based orsulfur-based additive, free of oxygen atoms. Its decompositiontemperature is greater than 500° C., which prevents or limits theheterogeneous decomposition of the aromatic ligands of the precursor ofbis(arene) type comprising chromium during which, by dissociation of themetal-ligand bonds of the precursor, some of the hydrocarbon ligandsdecompose under the catalytic effect of the substrate and supply theircarbons so as to form ceramics of carbide type.

Preferentially, the inhibitor is a monocyclic aromatic hydrocarbonsubstituted with a thiol group or at least one chlorine, and even morepreferentially the inhibitor is thiophenol (C₆H₅SH) or hexachlorobenzene(C₆Cl₆).

The inhibitor may be present in a concentration equal to 1% to 10% ofthe molar concentration of the chromium precursor in the mothersolution, for example 2%.

Once the vaporization of the mother solution has been performed in stepa), the deposition step may be performed in a hot-walled reactorconventionally used in this field and operating under reduced pressure.The reactor in its entirety is heated to the temperature required forthe deposition, so that the walls, the reactive gas phase circulating inthe reactor and the substrate to be covered are at the same temperature.This type of reactor is also known as an “isothermal” reactor (or“quasi-isothermal” reactor, since a few temperature gradients maypossibly remain).

Use may also be made of a cold-walled reactor, in which only the reactoris not at the deposition temperature but at a lower temperature. In thiscase, the reactor yield, determined from the consumption of precursor,is lower.

According to the invention, the chemical vapor deposition reactor is ata deposition temperature comprised between 300° C. and 600° C., so thatany precursor of bis(arene) type present in the mother solutiondecomposes without, however, the solvent undergoing degradation. Thisavoids the generation of byproducts that are liable to pollute thechamber by becoming deposited on the reactor walls or even on thesubstrate.

The deposition temperature according to step b) is preferentiallycomprised between 350° C. and 550° C., even more preferentially between350° C. and 450° C., so as to avoid or further limit any deformations orphase transformations of the substrate when the latter is metallic.

Alternatively, the deposition temperature according to step b) iscomprised between 300° C. and 400° C., which improves the density of theprotective layer and promotes its amorphous nature, and thus itsresistance to oxidation, to hydriding and/or to the migration throughthe nuclear component of undesired material such as a fissile material.

The deposition step b) is performed on the final layer of the support.For example, for deposition onto the outer surface of the support, thedeposition of the protective layer is performed on the substrate or onthe final interposed layer depending on whether the support contains,respectively, a substrate that is bare or coated with at least oneinterposed layer.

After step b), the manufacturing process of the invention may comprisethe following step:

c) performing on said at least one protective layer at least one stepchosen from a subsequent treatment step of ionic or gaseous nitridation,ionic or gaseous silicidation, ionic or gaseous carbosilicidation, ionicor gaseous nitridation followed by ionic or gaseous silicidation orcarbosilicidation.

This post-treatment step improves the heat resistance and thetribological properties of the protective layer, more particularly itsscratch resistance.

These post-treatment methods are known to those skilled in the art, andare described, for example, in the document “S. Abisset, F. Maury, R.Feurer, M. Ducarroir, M. Nadal and M. Andrieux; Gas and plasma nitridingpretreatment of steel substrates before CVD growth of hard refractorycoatings; Thin Solid Films, 315 (1998) 179-185” (reference [10]).

Since the ionic treatment is a plasma-enhanced treatment for which theminimum deposition temperature may be about 400° C., it is applicableonly to the outer surface of a protective layer.

The minimum deposition temperature for a gaseous carbosilicidation and agaseous silicidation is, respectively, about 900° C. and about 800° C.

In general, the silicidation and carbidation methods use, respectively,silane or one of its homologs (Si_(n)H_(2n+2)) and a hydrocarbon (forexample CH₄, C₃H₈, C₂H₂ or C₂H₄) and may operate, respectively, with orwithout a plasma at a minimum temperature of about 800° C. or 400° C.

In general, steps a), b) and/or c) are performed with a carrier gas soas to inject any chemical species into the chemical vapor depositionreactor. The carrier gas comprises at least one rare gas, which isusually chemically inert with respect to the various chemical speciespresent in the reactor. The rare gas may be chosen from xenon orkrypton, but preferably from nitrogen, helium or argon. The carrier gasis, for example, at a pressure comprised between 0.2 Pa and 2 Pa.

Once the various steps of the manufacturing process of the inventionhave been performed, the gaseous effluent leaving the chemical vapordeposition reactor comprises precursor molecules, the solvent and, whereappropriate, the inhibitor which have not been consumed or pyrolyzed.The effluent may also comprise free ligands dissociated from theprecursor, which are of the same aromatic family as the solvent. Theyare incorporated into the base solvent, with which they are miscible,and act themselves as solvent. A major and unexpected advantage is thatthe majority of these compounds leaving the reactor at low temperatureare monocyclic aromatic molecules, generally of chemical structuresimilar or identical to that of the initial compounds, namely theprecursor or the solvent. It is thus advantageous to collect them. Theyare gaseous on leaving the reactor due to the temperature and pressureconditions, but liquid under standard conditions. The mixture thuscollected will form a solution, known as daughter solution, which may beintroduced into the feed tank of the reactor as a new mother solutionthat can be used in step a) of the manufacturing process of theinvention. The recycling process resulting therefrom described in patentapplication FR 1562862 (reference [11]).

By virtue of its features, the manufacturing process of the presentinvention allows such recycling and can thus function in a closed cycle,which has many advantages: reduction or even elimination of thedischarging of environmentally unfriendly substances, economic savingvia the optimum use of the precursors, and, as illustrated below, anincrease in the hardness of the protective coating.

On conclusion of the manufacturing process of the invention, the supportis coated with at least one protective layer. This protective coatingmakes it possible among others to combat the oxidation, the hydridingand/or migration of any undesired material inside or outside the nuclearcomponent, for instance any fissile material derived from the nuclearfuel.

The protective materials that may be deposited via the manufacturingprocess of the invention are varied. They are described below.

According to one embodiment of the invention, the mother solutioncontains the inhibitor and the precursor of bis (arene) type comprisingchromium; such that, at a deposition temperature comprised between 300°C. and 450° C., the protective material comprising a partiallymetastable chromium is obtained. In this case, the inhibitor ispreferably a monocyclic aromatic hydrocarbon substituted with a thiolgroup, for instance thiophenol.

The protective layer comprising a partially metastable chromium generahas a columnar structure. The constituent columnar grains of thecolumnar structure may have a mean diameter of from 100 nm to 1 μm.

The metastable chromium crystalline phase generally comprises chromiumof centered cubic crystallographic structure according to the Pm-3nspace group. Preferentially, the stable chromium crystalline phasecomprises chromium of centered cubic crystallographic structureaccording to the Im-3m space group and the metastable chromiumcrystalline phase comprises chromium of centered cubic crystallographicstructure according to the Pm-3n space group. For example, themetastable crystalline phase comprising chromium of centered cubiccrystallographic structure according to the Pm-3n space group representsfrom 1 atom % to 10 atom % of the partally metastable chromium.

The Im-3m and Pm-3n space groups are described, for example, on thefollowing website: https://en.wikipedia.org/wiki/Space_group. Theirstructure and their proportion may be determined by X-ray diffraction(XRD).

Obtaining this Im-3m+Pm-3n partially metastable polycrystalline chromiumis unexpected: to the inventors' knowledge, only the manufacturingprocess of the invention makes it possible to deposit a protective layerof such a crystallographic structure.

This crystallographic structure has a certain advantage for nuclearsafety. Specifically, the metastable chromium crystalline phase of Pm-3ntype disappears irreversibly above 450° C. Now, a nuclear reactor, forinstance a PWR reactor, functions under nominal conditions at about 380°C. If an XRD analysis, for example during a non-destructive control(NDC), reveals a posteriori the disappearance of the chromium metastablephase of Pm-3n type in the partially metastable chromium protectivelayer, it may be deduced therefrom that the environment around thenuclear component obtained via the manufacturing process of theinvention has been exposed, albeit briefly, to temperatures above 450°C., i.e. well above the nominal operating temperature of 380° C. Such adetection possibility, even a posteriori, of an abnormal increase intemperature constitutes a major advantage for managing the safety of anuclear reactor. The protective layer comprising a partially metastablechromium thus acts as an internal probe of the nuclear component,without this, however, harming the overall behavior of the component ina nuclear environment.

According to another embodiment of the invention, the mother solutioncontains the precursor of bis(arene) type comprising chromium; suchthat, at a deposition temperature comprised between 300° C. and 500° C.,the protective material comprising an amorphous chromium carbide isobtained.

In an ideal amorphous solid, of glass type, the atoms are arrangedrandomly forming a three-dimensional network. In the case of compoundsof carbide or nitride type based on transition metals, a certain degreeof short-range order may be demonstrated, for example over a distance ofless than 10 nm. At this scale, the amorphous solid is ofnanocrystalline nature: it is the disorientation of these domainsrelative to each other and the more disordered zones which separate themwhich gives them an amorphous structure.

Amorphous chromium carbide may be denoted as “a-CrC_(x)”: the term “a-”means amorphous, and the coefficient x indicates that the carbide doesnot have exactly the stoichiometry of one of the three stable chromiumcarbide compounds (Cr₂₃C₆; Cr₇C₃; Cr₃C₂). Its composition may be closeto Cr₇C₃ but intermediate with that of Cr₃C₂.

Above a deposition temperature of 500° C., chromium carbide is no longeramorphous but polycrystalline.

Obtaining a protective material comprising an amorphous chromium carbidevia the manufacturing process of the invention may have numerousadvantages.

As illustrated hereinbelow, amorphous chromium carbide is of very highhardness, for example between 22 GPa and 29 GPa, which is particularlyhigh when the precursors are recycled on conclusion of the manufacturingprocess. It is moreover generally free of grain joints, which makes itan efficient diffusion barrier, even at high temperature, which hasamong others the effect of limiting the penetration of chromium in azirconium-based substrate which would thus be weakened. These structuralcharacteristics of amorphous chromium carbide may be globally preservedeven after oxidation at 1100° C. followed by quenching in water.

A protective layer composed of amorphous chromium carbide is thus anexcellent solution for protecting a nuclear component with respect tooxidation, hydriding, the migration of any undesired material, and/ordamage during the handling of the nuclear component.

According to another embodiment of the invention, the mother solutioncontains the precursor of bis(arene) type comprising chromium, anadditional precursor chosen from a precursor of bis(arene) typecomprising vanadium, a precursor of bis(arene) type comprising niobium,a precursor comprising aluminum, or the mixture of these additionalprecursors; such that a protective material comprising a chromium alloychosen from a chromium/vanadium alloy, a chromium/niobium alloy, achromium/vanadium/niobium alloy or a chromium/aluminum alloy is obtainedin the presence of the inhibitor or such that a protective materialcomprising a carbide of the chromium alloy chosen from a carbide of achromium/vanadium alloy, a carbide of a chromium/niobium alloy, acarbide of a chromium/vanadium/niobium alloy or a carbide of achromium/aluminum alloy is obtained in the absence of the inhibitor.

The carbide of the chromium alloy results from the incorporation ofcarbon into one of the abovementioned chromium alloys, forming aninsertion carbide: it is thus a carbide of the chromium/vanadium alloy,a carbide of the chromium/niobium alloy, a carbide of thechromium/vanadium/niobium alloy or a carbide of the chromium/aluminumalloy (preferably the mixed carbide Cr₂AlC of “MAX phase” type), whichmay be denoted, respectively, as CrVC, CrNbC, CrVNbC, CrAlC, withoutthis notation referring to any stoichiometry.

Preferably, the chromium alloys or the corresponding carbide thereof aremixed alloys or mixed carbides (namely, they do not comprise any othermetallic element in a significant content, for example a content ofgreater than 0.5 atom %) and/or they are chromium-based alloys or thecorresponding carbide of the chromium-based alloy thereof.

These alloys improve the ductility of the protective layer of thenuclear component. The contents of each element in the alloy or in itsmixed carbide are chosen by a person skilled in the art so as to obtainthe mechanical properties, including the ductility, which are desired ina nuclear environment. For example, the atomic content of vanadium orniobium in these alloys may be comprised between 10% and 50%. Ingeneral, the mole ratios between the precursor of bis(arene) typecomprising chromium and the precursor of bis(arene) type comprisingvanadium or the precursor of bis(arene) type comprising niobium aresimilar or correspond, respectively, to the stoichiometric ratio in thechromium alloy between chromium and vanadium or niobium.

Preferentially, the chromium alloy is metastable or partiallymetastable, i.e. it is totally or partly formed from a metastablecrystalline phase, which is promoted by reducing the depositiontemperature.

According to another embodiment of the invention, the mother solutioncontains the precursor of bis(arene) type comprising chromium, a liquidprecursor comprising nitrogen as additional precursor being present inthe mother solution or a gaseous precursor comprising nitrogen beingpresent in the chemical vapor deposition reactor; such that theprotective material comprising a chromium nitride is obtained in thepresence of the inhibitor or such that the protective materialcomprising a chromium carbonitride is obtained in the absence of theinhibitor.

In a nuclear fuel cladding, a protective material comprising a chromiumnitride and/or a chromium carbonitride may further have the advantage ofcombating the interaction between the inner surface of the cladding (inparticular of the substrate) and the nuclear fuel pellet, known as thepellet-cladding interaction. With this aim, the deposition of theprotective layer may be completed by a passivation step directed towardpartially oxidizing the protective layer, for example by placing it incontact with oxygen or water.

Preferentially, the deposition temperature according to step b) iscomprised between 300° C. and 400° C., even more preferentially between300° C. and 500° C., for example 480° C., such that the chromium nitrideis amorphous.

Once all the inhibitor has been consumed to avoid the incorporation ofcarbon during the deposition of the chromium nitride, a chromiumcarbonitride may be formed with the remaining precursors. A mixture ofnitride and carbonitride is then obtained.

Preferentially, the chromium nitride or chromium carbonitride is CrN,Cr₂N or Cr₂(C,N).

The nature of the deposited nitride may depend on the ratio R betweenthe partial pressure of the precursor comprising nitrogen and that ofthe precursor of bis(arene) type comprising chromium: for a giventemperature, the hexagonal phase of the nitride Cr₂N is preferentiallyobtained for low values of R and the cubic phase of the nitride CrN isobtained for the highest values. A person skilled in the art will alsobe able to vary the deposition temperature or the deposition pressure soas to promote the production of CrN or Cr₂N.

According to another embodiment of the invention, the mother solutioncontains the precursor of bis(arene) type comprising chromium, aprecursor comprising silicon as additional precursor; such that, at adeposition temperature comprised between 450° C. and 500° C., theprotective material comprising a mixed chromium silicon carbide isobtained.

Where appropriate, the protective material comprising a mixed chromiumsilicon carbide may be included in the composition of an interphaselayer positioned between a layer of metallic nature and a layer ofceramic nature (for example of a composite material such as SiC/SiC) soas to promote the adhesion between these two layers of different nature.

Preferentially, the mixed chromium silicon carbide is amorphous, whichmay be promoted, for example, by an atomic percentage of silicon similarto chemical doping (for example an atomic percentage comprised between1% and 3%) which retards the crystallization of the protective materialand preserves the microstructure of the amorphous chromium carbide.

As illustrated hereinbelow, the amorphous mixed chromium silicon carbidehas good durability.

Preferentially, the amorphous mixed chromium silicon carbide has thegeneral formula Cr_(x)Si_(y)C_(z), with the stoichiometric coefficients“x” comprised between 0.60 and 0.70, “y” comprised between 0.01 and0.05, and “z” comprised between 0.25 and 0.35.

The mixed chromium silicon carbide may be of the “MAX phase” type.

The MAX phases herein are ternary carbides defined by the formulaM_(n+1)AX_(n), in which M is chromium, A is silicon and X is carbon.This class of materials is characterized by a hexagonal crystalstructure containing a stack of nanometric layers, and a smallproportion of nonmetallic atoms (25%, 33% and 37.5% when n is equal to1, 2 and 3, respectively). These materials have both a metallic natureand properties similar to those of ceramics.

The mixed chromium silicon carbide of “MAX phase” type according to theinvention preferably contains the silicon atom in an atomic percentagecomprised between 15% and 30%. Preferentially, it is chosen from a mixedcarbide of formula Cr₂SiC, Cr₃SiC₂, Cr₅Si₃C₂ or mixtures thereof, thencarbides comprising, as atomic percentages, 25% of silicon, 17% ofsilicon, 30% of silicon and 25% of aluminum.

According to another embodiment of the invention, the mother solutioncontains the precursor of bis(arene) type comprising chromium, aprecursor comprising silicon as additional precursor, a liquid precursorcomprising nitrogen as additional precursor being present in the mothersolution or a gaseous precursor comprising nitrogen being present in thechemical vapor deposition reactor; such that, at a depositiontemperature comprised between 450° C. and 550° C., the protectivematerial comprising a mixed chromium silicon nitride is obtained in thepresence of the inhibitor or such that the protective materialcomprising a mixed chromium silicon carbonitride is obtained in theabsence of the inhibitor.

Preferentially, the mixed chromium silicon carbonitride or the mixedchromium silicon nitride is amorphous, this structure being favored inparticular by a moderate deposition temperature.

The mixed chromium silicon nitride may have the general formulaCr_(x′)Si_(y′)N_(w′), with the stoichiometric coefficients “x′”comprised between 0.23 and 0.57, “y′” comprised between 0.003 and 0.240,and comprised between 0.42 and 0.56.

The mixed chromium silicon carbonitride may have the general formulaCr_(x″)Si_(y″)C_(z″)N_(w″), with the stoichiometric coefficients “x″”comprised between 0.20 and 0.56, “y″” comprised between 0.005 and 0.220,“z″” comprised between 0.05 and 0.34 and “w″” comprised between 0.06 and0.50.

To obtain the protective material comprising a mixed chromium siliconcarbide, a mixed chromium silicon nitride or a mixed chromium siliconcarbonitride, the molar percentage of the precursor comprising siliconmay be from 10% to 90% in the mother solution, preferentially from 10%to 25%, for example 15%. The molar percentage is defined here as theratio between the number of moles of the precursor comprisingsiiicon/(the sum of the number of moles of the precursor comprisingsilicon and of the precursor of bis(arene) type comprising chromium).Whether it is gaseous or liquid, the precursor comprising nitrogen isgenerally present in excess amount in the chemical vapor depositionreactor. Its concentration is, for example, 100 to 200 times greaterthan that of the precursor of bis(arene) type comprising chromium.

According to another embodiment of the invention, the mother solutionfurther contains, as additional precursors, at least one precursor ofbis(arene) type comprising an addition element chosen from yttrium,aluminum, vanadium, niobium, molybdenum, tungsten, a precursorcomprising aluminum or yttrium as addition elements or mixtures thereof;such that the protective material is doped with the addition element.

This doping may concern any protective material mentioned in the presentdescription. When the protective material is doped with the additionelement, it generally preserves the microstructure of the correspondingundoped protective material within which the addition element is usuallyin the form of an insertion element or even, in certain cases, in theform of a substitution element, for instance a substitution of chromiumfor silicon.

Preferentially, the protective material comprises the addition elementin a content of from 1 atom % to 10 atom %. This content increases withthe deposition temperature and the molar percentage in the mothersolution of the precursor of bis(arene) type comprising an additionelement which is generally greater than the atomic percentage of theaddition element in the protective material.

The precursors intended to obtain each protective material describedpreviously may have a variable composition.

Preferentially, the element M chosen from chromium, vanadium, niobium orthe addition element is present, respectively, in the precursor ofbis(arene) type comprising chromium, the precursor of bis(arene) typecomprising vanadium, the precursor of bis(arene) type comprising niobiumor the precursor of bis(arene) type comprising the addition element.Each of these precursors of bis(arene) type thus comprises thecorresponding element M. Preferably, the element M is in the oxidationstate zero (M₀) so as to have a precursor of bis(arene) type comprisingthe element M₀.

Similarly, the element M chosen from chromium, tantalum, molybdenum,tungsten, niobium, or vanadium present in the precursor of bis(arene)type comprising an interposed material chosen from chromium, tantalum,molybdenum, tungsten, niobium, or vanadium is preferably in theoxidation state zero (M₀) so as to have a precursor of bis(arene) typecomprising the element M₀.

In the precursor organometallic compound of bis(arene) type, the elementM₀ is “sandwich” complexed by the organic ligands, namely thesubstituted or unsubstituted arene groups. Since the element M₀ has thesame oxidation state as in the protective coating that is deposited (themixed or non-mixed carbides, nitrides, carbonitrides generally beinginsertion compounds, the element M₀ preserves the oxidation state zerotherein), the precursors of bis(arene) type usually decompose without acomplex reaction, for instance a redox reaction generating numerousbyproducts.

Preferentially, the precursor of bis(arene) type comprising the elementM₀ is a precursor of bis(arene) type free of oxygen atoms, of generalformula (Ar) (Ar′) M₀ in which Ar and Ar′, which may be identical ordifferent, each represent, independently of each other, an aromaticgroup of benzene type or benzene type substituted with at least onealkyl group.

Since the stability of the metal-ligand bond increases substantiallywith the number of substituents on the benzene nucleus, it isadvantageous to choose a precursor in which Ar and Ar′ represent twosparingly substituted aromatic ligands. Preferentially, the aromaticgroups Ar and Ar′ then each represent a benzene ligand or a benzeneligand substituted with one to three identical or different groupschosen from a methyl, ethyl or isopropyl group.

The precursor of bis(arene) type comprising the element M₀ may thus bechosen from at least one compound of formula M₀ (C₆H₆)₂), M₀ (C₆H₅Et)₂,M₀ (C₆H₅Me)₂ or M₀ (C₆H₅iPr)₂. It then decomposes from about 300° C. Ifit has a decomposition temperature of greater than 600° C., it isgenerally not selected so as to avoid decomposition of the solvent andto limit the formation of byproducts.

Preferably, the precursor of bis(arene) type comprising the element M₀has the formula M₀(C₆H₅Et)₂, since its liquid state under the conditionsof the vaporization step a) significantly decreases the amount ofsolvent in the mother solution and thus to increase the deposition rateduring step b).

By way of example, when the metal is chromium, the precursor may be asandwich chromium compound, such as bis(benzene)chromium (known as BBC,of formula Cr(C₆H₆)₂), preferably bis(ethylbenzene)chromium (known asBEBC, of formula Cr(C₆H₅Et)₂), bis(methylbenzene)chromium (of formulaCr(C₆H₅Me)₂) and bis(cumene)chromium (of formula Cr(C₆H₅iPr)₂), or amixture thereof. The precursor of bis(arene) type comprising the elementM₀ may also be an asymmetric derivative of formula (Ar)(Ar′)Cr, where Arand Ar′ are different; or a mixture of these bis(arene)chromiumcompounds which may be rich in one of these compounds. Only BBC existsin the form of a powder. It may be injected in the form of a solution,but the concentration is then rapidly limited by its low solubility inhydrocarbon-based solvents. The other precursors cited are liquid andmay be injected directly without solvent, but this does not make itpossible to satisfactorily control the microstructure of the deposits.Their use in solution is preferred, as this allows wide variation in theconcentration of said solution, and better adjustment of the injectionconditions and consequently of the physical properties.

Advantageously, the mother solution may contain various precursors,without having a negative impact on the manufacturing process of theinvention. In particular, the exact nature of the aromatic ligands ofthe metal is not critical, provided that these ligands preferably belongto the same chemical family of sparingly substituted monocyclic aromaticcompounds. The byproducts of the DLI-MOCVD reaction that are derivedfrom the initial reagents may thus be reintroduced into the chemicalvapor deposition reactor, even if the products collected at the reactoroutlet have structural variations among themselves. The purity of theinitial mother solution is not a critical point either, which makes itpossible to use commercial solutions which may contain, for example, upto 10% of derived compounds. As it is possible to recycle these derivedcompounds in the process itself, the recycled mother solutions whichwill be used for a subsequent deposition will contain variousbis(arene)s as precursors. The mother solution may thus contain amixture of several different precursors of general formulae (Ar) (Ar′)M₀. Such properties improve the capacities for industrialization of themanufacturing process of the invention.

As regards the precursors comprising a nitrogen atom, generally, theliquid precursor comprising nitrogen is hydrazine and/or the gaseousprecursor comprising nitrogen is ammonia. In general, and unlessotherwise indicated, the concentration in the chemical vapor depositionreactor of ammonia or hydrazine is, respectively, from 1 to 10 times orto 500 times greater than the concentration of the precursor ofbis(arene) type comprising chromium.

The precursor comprising silicon may, for its part, be an organosilanecompound which preferably comprises a group of phenylsilane oralkylsilane type. Preferentially, the precursor comprising silicon isthen chosen from diphenylsilane (C₆H₅)₂SiH₂, monophenylsilane(C₆H₅)SiH₃, diethylsilane (C₂H₅)₂SiH₂, triethylsilane (C₂H₅)₃SiH, ormixtures thereof.

The precursor comprising aluminum may be a tri(alkyl)aluminium offormula AlR₃, in which R is chosen, for example, from CH₃, C₂H₅ andC(CH₃)₃.

The precursor comprising yttrium may be an yttrium alkyl complex,particularly in which the alkyl group has large steric hindrance, moreparticularly a tri(alkyl)yttrium of formula YR₃. It may thus betris(cyclopentadienyl)yttrium (denoted YCp₃) in which R══C₅H₅.

The precursor comprising yttrium may also be an yttrium amigo complex,more particularly a tri(amido)yttrium of general formula YL₃. It maythus be tris[N,N-bis(trimethylsilyl)amide]yttrium.

In the light of the foregoing, the protective layer deposited onto thesupport, among others onto the substrate not coated with an interposedlayer, thus has a wide variety of compositions.

As an example, the nuclear component may comprise:

a zirconium-based substrate and a protective layer comprising partiallymetastable chromium (denoted Cr/Zr), or;

a zirconium-based substrate and a protective layer comprising amorphouschromium carbide (denoted CrC/Zr), or;

a molybdenum-based substrate and a protective layer comprising amorphouschromium carbide (denoted CrC/Mo), or;

a zirconium-based substrate and a protective layer comprising mixedchromium silicon carbide Cr_(x)Si_(y)C_(z) (denotedCr_(x)Si_(y)C_(z)/Zr).

The composition may also vary within a protective layer itself. Thus, aprotective layer may have a composition gradient: when the protectivematerial is composed of several chemical elements, for example elementsA and B for a material of formula AxBy, a composition gradient consistsin varying the atomic percentage x or y of at least one element A or Baccording to the thickness of the coating. This variation may becontinuous or in stages.

In practice, to vary this atomic percentage, two mother solutions whichare more or less rich in element A or B may be injected simultaneouslyat a variable flow rate during the growth of the protective layer usingtwo injectors.

A protective layer with a composition gradient is particularlyadvantageous as interposed layer since it gradually accommodates themechanical properties of the protective coating to be more coherent withthe corresponding properties of the materials with which it forms ajunction. The protective material deposited in a composition gradientis, for example, the alloy of chromium or its carbide, for example achromium/vanadium alloy.

The protective coating comprising at least one protective layer may alsohave a variety of structures, of physicochemical characteristics and/orof geometries within one or more layers.

Thus, the protective layer may have a columnar or equiaxed structure.Preferably, the structure is equiaxed when the protective layer has adiffusion-barrier function. The diffusion-barrier property of aprotective coating is influenced by its microstructure. Thus, usually,the anti-diffusion performance of an exogenous chemical elementincreases in the following order: columnar<equiaxed<amorphous.

In the columnar structure, the grains of the protective material areelongated, since they grow in a preferential direction, generally afterthe protective layer reaches a critical thickness, for instance a fewtens to hundreds of nanometers. The columnar structure is also favoredby secondary growth by epitaxy, generally at high temperature and bymaking the stack grow very rapidly.

On the other hand, in the equiaxed structure, the grains of theprotective material also grow in all their preferential growthdirections.

The protective layer may also have a particular density. It is, forexample, comprised between 90% and 100% (preferably 95% to 100) of thedensity in solid form of the stable metallic chromium of centered cubiccrystallographic structure according to the Im-3m space group.

Preferentially, said at least one protective layer has a hardnesscomprised between 15 GPa and 30 GPa, preferably between 20 GPa and 29GPa. Generally, the denser a protective layer is, the more efficient itis as a diffusion barrier, for example for preventing the diffusion ofoxygen, hydrogen or any undesired material. The density of a protectivelayer is generally higher when it forms part of a multilayer coating, oris formed at a reduced deposition rate, for example by working atreduced temperature or pressure.

The geometry of the protective coating comprising the protective layersmay also be variable.

Each of said at least one protective layer may have a thickness of from1 μm to 50 μm, even more preferentially from 1 μm to 25 μm, or even from1 μm to 15 μm.

Alternatively, said at least one protective layer may have a thicknessof from 10 μm to 50 μm: this protective layer of minimum thicknesspromotes the resistance to oxidation.

Preferentially, the cumulative thickness of said protective layers isfrom 2 μm to 50 μm. The nuclear component may comprise from 1 to 50protective layers.

The protective coating may also be a monolayer or multilayer coating.Several identical or different protective layers of composition mayform, respectively, a homogeneous multilayer protective coating or aheterogeneous multilayer protective coating.

Preferentially, the homogeneous multilayer protective coating generallydisfavors the production of a columnar structure. It may compriseprotective layers composed of the partially metastable chromium (itsdensity promoting the diffusion-barrier role of the homogeneousmultilayer coating) or of the chromium alloy, for example with athickness of about 400 nm, or even from 100 nm to 400 nm.

A multilayer material differs from a monolayer material of overallequivalent chemical composition, among others by the presence of aninterface between the layers. This interface is such that it generallycorresponds to a perturbation of the microstructure at the atomic scale.It is identified, for example, by means of a fine characterizationtechnique such as high-resolution transmission electron microscopy(TEM), EXAFS (Extended X-Ray Absorption Fine Structure) spectroscopy, aCastaing microprobe which gives a composition profile, or even aposteriori by the optional presence of oxide(s) since the interface zoneis a preferential oxidation pathway.

A multilayer material is generally obtained via a process which performsa sequenced deposition of each monolayer. In order to deposit thehomogeneous multilayer protective coating, the deposition of each layermay be separated by a waiting time, for example between 1 minute and 10minutes, so as to purge the chemical vapor deposition reactor.

By way of example, when the protective coating is of the heterogeneousmultilayer type, it may comprise protective layers composed of:

chromium and amorphous chromium carbide (denoted Cr/CrC, or

chromium and chromium nitride (denoted Cr/CrN), or

amorphous chromium carbide and chromium nitride (denoted CrC/CrN), or

chromium, amorphous chromium carbide and chromium nitride (denotedCr/CrC/CrN), or chromium and mixed chromium silicon carbide (denotedCr/Cr_(x)Si_(y)C_(z)), or

mixed chromium silicon carbide and amorphous chromium carbide (denotedCr_(x)Si_(y)C_(z)/CrC), or

mixed chromium silicon carbide and chromium nitride (denotedCr_(x)Si_(y)C_(z)/CrN), or

chromium and mixed chromium silicon nitride (denoted Cr/CrSixNy), or

mixed chromium silicon nitride and amorphous chromium carbide (denotedCrSixNy/CrC), or

mixed chromium silicon nitride and chromium nitride (denotedCrSixNy/CrN), or

mixed chromium silicon carbide and mixed chromium silicon nitride(denoted Cr_(x)Si_(y)C_(z)/CrSi_(x)N_(y)).

In order to manufacture a protective coating comprising several layersof different composition, one possibility is to use as many injectors asthere are layers of different composition, each injector making itpossible to introduce a mother solution of specific composition into thechemical vapor deposition reactor.

When the heterogeneous multilayer protective coating comprises achromium protective layer, the last protective layer of the coating isgenerally a protective layer of ceramic nature (carbide, nitride orcarbonitride, which may or may not be mixed).

The nuclear component is generally a component of the nuclear reactorcore, more particularly a nuclear fuel cladding, a spacer grid, a guidetube, a plate fuel or an absorber rod. Preferentially, the nuclear fuelcladding is in the form of a tube or a plate. The plate may result moreparticularly from the assembly of two subunits.

The invention also relates to a nuclear component which is obtained orobtainable by the manufacturing process of the invention.

The invention also relates to a nuclear component comprising:

i) a support containing a substrate based on a metal chosen fromzirconium, titanium, vanadium, molybdenum or base alloys thereof, thesubstrate being coated or not coated with an interposed layer placedbetween the substrate and at least one protective layer;

ii) said at least one protective layer coating said support and composedof a protective material comprising chromium chosen from a partiallymetastable chromium comprising a stable chromium crystalline phase and ametastable chromium crystalline phase, an amorphous chromium carbide, achromium alloy, a carbide of a chromium alloy, a chromium nitride, achromium carbonitride, a mixed chromium silicon carbide, a mixedchromium silicon nitride, a mixed chromium silicon carbonitride, ormixtures thereof.

These two types of nuclear component, namely the nuclear componentaccording to the invention and the nuclear component which is obtainedor obtainable by the manufacturing process of the invention, may be inone or more of the variants described in the present description for themanufacturing process of the invention, among others the variantsrelating to the structure, the physicochemical characteristics (forinstance the density), the geometry and/or the composition of thenuclear component.

These variants relate among others, but not exclusively, to: thesubstrate, the interposed layer, the liner, the protective layerincluding its combination with a particular substrate, the protectivecoating or the type of nuclear component as are detailed in the presentdescription, among others the description of the manufacturing processof the invention.

In these two types of nuclear component, the protective material moreparticularly comprises a chromium alloy, a carbide of a chromium alloy,a chromium nitride, a chromium carbonitride, a mixed chromium siliconcarbide, a mixed chromium silicon nitride, a mixed chromium siliconcarbonitride, or mixtures thereof.

For example, for these two types of nuclear component, the particularembodiments of the invention, optionally taken in combination, may besuch that:

the substrate is composed of zirconium or of a zirconium-based alloy.

the interposed layer comprises at least one interposed material chosenfrom chromium, tantalum, molybdenum, tungsten, niobium, vanadium, alloysthereof, a titanium nitride, a titanium carbonitride, a mixed titaniumsilicon nitride, a mixed titanium silicon carbide, a mixed titaniumsilicon carbonitride, a mixed titanium aluminum nitride, or mixturesthereof;

the thickness of the interposed layer is from 1 μm to 5 μm;

the nuclear component further comprises a liner placed on the innersurface of the support;

the at least one protective layer is an outer protective layer whichcoats the outer surface of the support and/or, when the nuclearcomponent comprises an inner volume which may or may not be open, aninner protective layer which coats the inner surface of the supportcoated or not coated with the liner;

the material of which the liner is composed comprises a titaniumnitride, a titanium carbonitride, a mixed titanium silicon nitride, amixed titanium silicon carbide, a mixed titanium silicon carbonitride, amixed titanium aluminum nitride, or mixtures thereof;

the liner has a thickness of from 1 μm to 10 μm;

the chromium alloy is chosen from a chromium/vanadium alloy, achromium/niobium alloy, a chromium/vanadium/niobium alloy or achromium/aluminum alloy or the carbide of the chromium alloy is chosenfrom a carbide of a chromium/vanadium alloy, a carbide of achromium/niobium alloy, a carbide of a chromium/vanadium/niobium alloyor a carbide of a chromium/aluminum alloy;

the mixed chromium silicon carbide is amorphous;

the mixed chromium silicon carbide is of the “MAX phase” type;

the mixed chromium silicon carbonitride or the mixed chromium siliconnitride is amorphous;

the protective material is doped with an addition element chosen fromyttrium, aluminum, vanadium, niobium, molybdenum, tungsten, or mixturesthereof;

the protective material comprises the addition element in a content offrom 1 atom % to 10 atom %;

the nuclear component comprises a zirconium-based substrate and aprotective layer comprising a mixed chromium silicon carbideCr_(x)Si_(y)C_(z).

the at least one protective layer has a composition gradient;

the at least one protective layer has an equiaxed structure;

the at least one protective layer has a density comprised between 90%and 100% of the density in solid form of the stable metallic chromium ofcentered cubic crystallographic structure according to the Im-3m spacegroup;

the at least one protective layer has a hardness comprised between 15GPa and 30 GPa;

each of the at least one protective layer has a thickness of from 1 μmto 50 μm, or even from 10 μm to 50 μm;

several protective layers of identical or different composition form,respectively, a homogeneous multilayer protective coating or aheterogeneous multilayer protective coating;

the homogeneous multilayer protective coating comprises protectivelayers composed of the chromium alloy;

the heterogeneous multilayer protective coating comprises protectivelayers composed of:

-   -   chromium and chromium nitride, or    -   mixed chromium silicon carbide and chromium, or    -   mixed chromium silicon carbide and chromium nitride, or    -   mixed chromium silicon nitride and chromium, or    -   mixed chromium silicon nitride and chromium nitride, or    -   mixed chromium silicon carbide and mixed chromium silicon        nitride;

the nuclear component is a nuclear fuel cladding, a spacer grid, a guidetube, a plate fuel or an absorber rod.

The invention also relates to the use of these types of nuclearcomponent for combating oxidation and/or hydriding in a humid atmospherecomprising water, in particular in the form of water vapor.

The invention also relates to the use of these types of nuclearcomponent, for combating hydriding in an hydrogenated atmospherecomprising hydrogen, in particular an hydrogenated atmosphere comprisingmore than 50 mol % of hydrogen and/or water in addition, in particularin the form of water vapor (for example at a minimum of 25 mol % ofwater, among others 25% to 50%).

The humid atmosphere may comprise from 25 mol % to 100 mol %,preferentially from 50 mol % to 100 mol % and even more preferentiallyfrom 75 mol % to 100 mol % of water vapor.

The humid atmosphere or the hydrogenated atmosphere may further comprisean additional gas chosen from air, nitrogen, carbon dioxide, or mixturesthereof.

Preferentially, the purpose of these uses is to combat oxidation and/orhydriding:

in which the humid or hydrogenated atmosphere is at a temperaturecomprised between 25° C. and 1400° C., or even between 25° C. and 1600°C., more particularly a temperature comprised between 200° C. and 1300°C., even more particularly between 1200° C. and 1300° C., or evenbetween 1300° C. and 1600° C.; or preferentially between 300° C. and1200° C.; and/or

up to at least 5000 seconds, more particularly between 1000 seconds and5000 seconds, in particular when the temperature is comprised between1200° C. and 1300° C.; and/or

in the presence of a temperature increase rate which is comprisedbetween 0.1° C./second and 300° C./second; and/or

following quenching with water of the nuclear component, in particularin which the quenching takes place at a temperature comprised between25° C. and 400° C.

The invention also relates to a probe for temperature variationpreferably a temperature increase above 450° C.) in a nuclearenvironment, the probe comprising a partially metastable chromiumcomprising a stable chromium crystalline phase and a metastable chromiumcrystalline phase.

As indicated previously, the use of partially metastable chromium formeasuring a temperature variation among others has an advantage in the aposteriori measurement of a temperature increase above 450° C. and thusan advantage for nuclear safety.

The metastable chromium crystalline phase may comprise chromium ofcentered cubic crystallographic structure according to the Pm-3n spacegroup.

Preferentially, the stable chromium crystalline phase comprises chromiumof centered cubic crystallographic structure according to the Im-3mspace group and the metastable chromium crystalline phase compriseschromium of centered cubic crystallographic structure according to thePm-3n space group.

Generally, the metastable crystalline phase comprising chromium ofcentered cubic crystallographic structure according to the Pm-3n spacegroup represents from 1 atom % to 10 atom % of the partially metastablechromium.

The probe may be the component of a system or of a part fornon-destructive control (NDC), namely, for example, a control whichcharacterizes the state of integrity of structures or materials, withoutdegrading them, during their production, use or maintenance.

The part may thus be of very simple structure since it is essentiallyits composition which gives it its properties. It thus acts as a tracerand may be left in the nuclear environment in order to be able to bereadily analyzed a posteriori for detecting the temperature variation.

For the sake of integration and compactness, the nuclear component ofthe invention may comprise the probe, among others in all the variantsdescribed for the nuclear component.

Detailed Description of the Invention

In the present description of the invention, a verb such as “tocomprise”, “to incorporate”, “to include”, “to contain”, “composed of”and the conjugated forms thereof are open terms and thus do not excludethe presence of additional element(s) and/or step(s) which are added tothe initial element(s) and/or step(s) stated after these terms. However,these open terms further target a particular embodiment in which onlythe initial element(s) and/or step(s), with the exclusion of any other,are targeted; in which case, the open term further targets the closedterm “to consist of”, “to be constituted of” and the conjugated formsthereof.

The expression “and/or” is directed toward connecting elements for thepurpose of simultaneously denoting a single one of these elements, boththe elements, or even a mixture thereof or a combination thereof.

The use of the indefinite article “a” or “an” for an element or a stepdoes not exclude, unless otherwise mentioned, the presence of aplurality of elements or steps.

Any reference sign in parentheses in the claims shall not be interpretedas limiting the scope of the invention.

Moreover, unless otherwise indicated, the limit values are included inthe ranges of parameters indicated and the temperatures indicated areconsidered for an implementation at atmospheric pressure.

Any coating, layer or liner deposited by means of the manufacturingprocess of the invention can cover a part or, preferably, all of thesurface on which it lies.

Still in the present description, any alloy is generally a base alloy.The term “base alloy” of the metal included among others in thecomposition of the substrate, of the protective material or of theinterposed material denotes any alloy based on the metal in which thecontent of the metal is at least 50% by weight of the metal of thealloy, particularly more than 90%, or even more than 95%. The base metalis, for example, zirconium, titanium, chromium, tantalum, molybdenum,tungsten, niobium or vanadium.

An alloy may also contain other chemical elements (for example in acontent of greater than 0.5 atom %), in particular a second metalelement, and then constitutes a mixed alloy.

The carbon insertion element and/or the nitrogen insertion element in analloy form, respectively, a carbide of the alloy, a nitride of the alloyor a carbonitride of the alloy, which may also be mixed in the presenceof a second metal element.

The alloy is preferably able to be used in the nuclear sector and/orunder irradiation.

Other subjects, characteristics and advantages of the invention will nowbe specified in the description which follows of particular embodimentsof the process of the invention, which are given by way of illustrationand without limitation, with reference to the appended figures.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 represents the mass percentage of various chemical elements as afunction of the depth obtained by Glow Discharge Spectrometry (GDS) of aZircaloy-4 wafer covered with a layer of amorphous chromium carbide viathe manufacturing process of the invention, after its exposure toambient air.

FIGS. 2A (overall view) and 2B (magnification of the oxide substrate)are Transmission Electron Microscopy (TEM) images illustrating a crosssection of the wafer whose GDS analysis is shown in FIG. 1.

FIGS. 3A and 3B illustrate, respectively, after exposure to dry air andto humid air, the gain in mass as a function of the temperature forZircaloy-4 wafers covered with various thicknesses of a protective layerof amorphous CrC and for a bare Zircaloy-4 wafer.

FIGS. 3C and 3D illustrate, respectively, after exposure to dry air andto humid air, the gain in mass at 1200° C. as a function of time forZircaloy-4 wafers covered with various thicknesses of a protective layerof amorphous CrC and for a bare Zircaloy-4 wafer.

FIGS. 4A and 4B illustrate, respectively, after exposure to dry air andto humid air, the gain in mass as a function of the temperature formolybdenum wafers covered with various thicknesses of a protective layerof amorphous CrC and for a bare molybdenum wafer.

FIGS. 5A and 5B illustrate, respectively, after exposure to dry air andto humid air, the gain in mass as a function of the temperature forZircaloy-4 wafers covered with various thicknesses of a protective layerof partially metastable chromium and for a bare Zircaloy-4 wafer.

FIGS. 5C and 5D illustrate, respectively, after exposure to dry air andto humid air, the gain in mass at 1200° C. as a function of time forZircaloy-4 wafers covered with various thicknesses of a protective layerof partially metastable chromium and for a bare Zircaloy-4 wafer.

FIGS. 6A and 6B illustrate, respectively, as a function of thetemperature and as a function of the time at 1200° C., the gain in massfor a Zircaloy-4 wafer covered with a protective layer of mixedamorphous chromium silicon carbide Cr_(x)Si_(y)C_(z) and for a bareZircaloy-4 wafer, in dry air and in humid air.

FIGS. 7A (viewed from one side of the wafer) and 7B (particular focus onone corner of the wafer) are Scanning Electron Microscopy (SEM) imagesillustrating a cross section of a Zircaloy-4 wafer covered with aprotective layer of amorphous CrC deposited via the manufacturingprocess of the invention, subjected to oxidation at 1100° C. followed byquenching in water. FIG. 7C is an SEM image corresponding to FIG. 7A inwhich wafers each covered with a protective layer of various thicknessesare grouped (left-hand image: thickness of 9 μm, central image:thickness of 5 to 6 μm, right-hand image: thickness of 2 to 3 μm). FIG.7D illustrates the GDS analysis of the wafer with a thickness of 9 μm.

FIGS. 8A, 8B and 8C represent SEM images illustrating the microstructureof a monolayer coating (8A, 8B) or multilayer coating (8C) of partiallymetastable chromium deposited at an increasing rate onto a siliconsubstrate.

FIGS. 9A, 9B, 9C, and 9D represent schematic views in cross section ofsome of the geometries of a tubular nuclear fuel cladding obtained bythe manufacturing process of the invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS

The examples of deposition of a coating onto a substrate which followare performed in a chemical vapor deposition reactor placed in a tubefurnace (model sold by the company Carbolite). The reactor is composedof a silica tube: it is connected to the gaseous effluent inlet andevacuation system via leaktight connections and to the mother solutionvia an injector (Vapbox model sold by the company Kemstream).

In the examples that follow, the substrate is not coated with aninterposed layer. However, these examples may be transposed to the casewhere the substrate is formed from a substrate coated with an interposedlayer.

1. Coating on a Silicon Substrate

As a preliminary experiment, the manufacturing process of the Inventionis transposed to a silicon substrate, a square silicon wafer (sidelength of 1 cm and 300 μm thick) is placed in the reactor so as to becovered with a protective layer of chromium carbide (CrC), chromium (Cr)or mixed chromium silicon carbide (Cr_(x)Si_(y)C_(z) denoted CrSiC)using the following compounds:

chromium precursor: bis(ethylbenzene)chromium, known as BEBC (Cr(C₆H₅Et)₂),

silicon precursor: bis(phenyl)silane (H₂Si (C₆H₅)₂),

inhibitor: thiophenol (C₆H₅SH),

solvent: toluene,

carrier gas: N₂ at a flow rate of 500 sccm, namely 500 cm³/min understandard conditions,

evaporator temperature: 200° C.,

deposition time: 20 minutes.

The other conditions for the deposition of the protective coatingconstituting the outer coating are indicated in Table 1, in particularthe injector open time and frequency, and the temperature and pressurein the chemical vapor deposition reactor.

The injection parameters (open time and frequency) act essentially onthe deposition rate and thus on the deposit thickness by varying thedeposition time. The open frequency is, for example, from 1 Hz to 10 Hz,typically 10 Hz.

The parameters which act on the physicochemical and structuralcharacteristics of the deposit are essentially the depositiontemperature (acting in particular on the structure: amorphous orcrystalline; dense or porous; equiaxed or columnar) and the compositionof the injected solution.

By convention, the silicon substrate covered with coating number N isreferred to in Table 1 as sample N: sample 1 thus denotes the siliconsubstrate covered with coating 1.

TABLE 1 Total Injection conditions deposition Deposition CoatingFrequency Opening time pressure temperature (N) Injected solution (Hz)(ms) (10⁻³ Pa) (° C.) CrC (1) BEBC (3.5 × 10⁻¹ M) + 10 0.5-5 1.3; 6.7450; 500; toluene (50 ml) 550 Cr (2) BEBC (3.5 × 10⁻¹ M) + 10 0.5-5 6.7400; 450 thiophenol (2 mol %) + toluene (50 ml) CrSiC (3) BEBC (3.5 ×10⁻¹ M) + 4 0.5 6.7 450; 500 bis(phenyl)silane (15 mol %) + toluene (50ml)

Table 2 collates the result of the structural analyses of thesecoatings, and also the result of the heat resistance tests detailed inthe following examples (thermal stability: temperature at and abovewhich a crystalline phase appears in XRD in situ under argon). Theatomic composition expressed as atomic percentage is measured with aCastaing microprobe (known as EPMA, according to the English acronym for“Electron Probe Microanalysis”). Variation of the injection parametersgives several coating thicknesses, which are generally between 0.5 μmand 10 μm: the thicknesses selected for the oxidation tests that followare indicated in Table 2.

As regards their structure, Table 2 shows that the CrC and CrSiCcoatings are amorphous (no crystalline structure), the CrC coatingnevertheless being polycrystalline for a deposition temperature of 550°C. As regards the Cr coating, it comprises two crystalline phases: amain phase composed of centered cubic (bcc) chromium crystals in theIm-3m space group (lattice parameter a=2.88 Å) and a phase in very minorproportion composed of chromium crystals of centered cubiccrystallographic structure in the Pm-3n space group (lattice parametera=4.59 Å) when the DLI-MOCVD deposition temperature is less than orequal to 450° C.

TABLE 2 Deposition Thermal Coating Thickness temperature Atomicstability (N) (μm) (° C.) Structure composition (° C.) CrC (1) 2; 5; 9400 Amorphous Cr_(0.64)C_(0.33)O_(0.03) Cr₇C₃ 580 500 Cr₃C₂ 590 Cr₂O₃610 550 Polycrystalline Cr_(0.61)C_(0.32)O_(0.07) Cr (2) 4; 6 400Polycrystalline, Cr_(0.69)C_(0.12)S_(0.08)O_(0.11) Metastable 450two-phased: Cr phase main phase disappears Cr bcc (Im-3m); at 450° C.metastable phase Cr bcc (Pm-3n). Multilayer structure to increase thedensity. CrSiC (3) 4 450 Amorphous Cr_(0.66)Si_(0.02)C_(0.29)O_(0.03)Cr₇C₃ 750 500 CrSi₂ 750

2.Evaluation of the Heat Resistance

The coatings must withstand the temperature under an oxidativeatmosphere and act as a diffusion barrier.

Their heat resistance under an inert atmosphere is first studied by XRDin situ as a function of the temperature under Ar. The temperature atwhich a structural change appears (crystallization, phasetransformation) is measured. Such structural changes are liable toaccelerate the diffusion of oxygen through the coating to the substrate,via the grain joints or microcracks. The coating must therefore be ableto maintain its structural integrity at the highest possibletemperatures.

The heat resistance results obtained for the wafers coated in thepreceding example are collated in Table 2.

2.1. Heat Resistance of an Amorphous Si/CrC Wafer Under an InertAtmosphere

A silicon substrate passivated with a layer of a few hundred nanometerscomposed of amorphous silicon nitride (generally Si₃N₄), which iscommercially available, is used to avoid any diffusion with theprotective layer deposited on its surface.

Alternatively, a bare silicon substrate may be passivated by thermal CVDwith a mixture (SiH₄+NH₃) or by plasma (PECVD) with NH₃.

The passivated silicon substrate is then coated with amorphous chromiumcarbide according to the conditions of Table 1 (specific conditions:injection at 10 Hz, deposition temperature=500° C., depositionpressure=6700 Pa).

In a chamber flushed with a stream of argon to limit or even prevent anycontamination with oxygen, this sample is heated from 30° C. to 800° C.at a temperature increase rate of 5° C./minute while in parallel beinganalyzed by X-ray diffraction (XRD). After natural cooling to 30° C., afinal X-ray spectrum is recorded.

Analysis of the X-ray spectra obtained shows that the sample maintainsan amorphous structure up to 570° C. It then crystallizes in the form ofCr₇C₃ at about 580° C., and then Cr₃C₂ at about 590° C., and finallybecomes oxidized to Cr₂O₃ at about 610° C. due to traces of oxygenpresent on account of an airtightness defect of the reactor: these threephases remain up to 800° C. with a proportion of Cr₂O₃ which increaseswith the temperature.

These results indicate that the amorphous chromium carbide coatingpreserves its physical integrity up to 800° C. under an inert atmosphereof argon.

2.2. Heat Resistance of a Partially Metastable Si/Cr Wafer Under anInert Atmosphere

A silicon substrate passivated as previously is coated with partiallymetastable chromium according to the conditions of Table 1 (specificconditions: deposition temperature=400° C., deposition pressure=6700Pa).

It is then placed in the reactor flushed with a stream of argon, inwhich it is gradually heated from 30° C. to 600° C. at a temperatureincrease rate of 1° C./second. In parallel, it is analyzed by XRD(acquisitions of 35 minutes each at 30° C. and every 50° C. from 350°C.).

Analysis of these spectra shows that the partially metastable chromiumis polycrystalline: it contains a stable phase (Im-3m) and a metastablephase (Pm-3n).

The metastable phase (Pm-3n) disappears after 450° C. in parallel, thestable phase (Im-3m) remains throughout the heat treatment, thecorresponding XRD peaks become finer and more intense by virtue of theimprovement in the crystallinity.

Above 550° C., chromium oxide Cr₂O₃ appears as a result of the traces ofoxygen present in the in situ analysis chamber.

On conclusion of the temperature cycle, the sample is cooled naturallyto 30° C.: the metastable phase is no longer present, since it hasundergone an irreversible transformation. Only the stable phase remains,along with chromium oxides in small proportion.

These results indicate that the chromium metal coating has a heatresistance under an inert atmosphere in accordance with conventionalchromium of centered cubic (bcc) structure which is stable under normalconditions.

Moreover, it is seen that the minor phase of metastable chromium becomestransformed at about 450° C. to form the main stable chromium phase:this is coherent with the literature which states that metastablechromium is transformed into stable chromium after 450° C.

2.3. Heat Resistance of an Amorphous Si/CrSiC and Steel/CrSiC WaferUnder an Inert Atmosphere

A passivated silicon substrate is coated with an amorphous mixedchromium silicon carbide according to the conditions of Table 1(specific conditions: mole ratio of diphenylsilane to BEBC=15%,deposition temperature 450° C.), and is then placed in the reactorflushed with a stream of argon. This sample is heated from 30° C. to 70°C. at a temperature increase rate of 1° C./second while in parallelbeing analyzed by XRD (acquisitions every 50° C. from 400° C.).

In a similar manner to these operating conditions, a 304Lstainless-steel substrate coated with an amorphous mixed chromiumsilicon carbide at a deposition temperature of 500° C. is also analyzedby XRD (acquisitions every 50° C. from 600° C.) during heating from 30°C. to 1100° C.

Comparative analysis of the XRD spectra for these two samples showssimilar behavior: the amorphous nature disappears at about 750° C. bycrystallization of a chromium carbide Cr₇C₃ and of the compound CrSi₂.Furthermore, it shows that since CrSi₂ appears on the two substrates,this compound is formed with the silicon of the coating and not that ofthe substrate, the silicon nitride passivation layer applied previouslyto the surface of the silicon substrate constituting a diffusionbarrier.

Above 750° C., other crystalline phases appear: Cr₂O₃ after 850° C. andCr₃C₂ after 1000° C. It is thus noted that the addition of Si to thechromium carbide coating delays its crystallization toward highertemperatures (750° C. instead of 580° C.).

3. Evaluation of the Oxidation in Air

3.1. Resistance to Oxidation in Air at 25° C. of an Amorphous Zr/CrCWafer

In order to evaluate its resistance to mild oxidation at roomtemperature, a wafer based on the zirconium alloy Zircaloy-4(dimensions: 45 mm×14 mm×1 mm) is coated with a single 4 μm protectivelayer of amorphous chromium carbide in accordance with the depositionconditions indicated in Table 1 for coating 1 (depositiontemperature=450° C., deposition pressure=6700 Pa). It resides in air atroom temperature for a few days, which results in very mild surfaceoxidation of the chromium carbide coating due to the passage into theambient air, as for the majority of metals and alloys.

The elemental composition by mass according to the depth in this sampleis then determined for the elements zirconium, chromium, oxygen andcarbon by glow discharge spectrometry (GDS). It is shown in FIG. 1 andreveals the presence of a nonzero oxygen content at the interfacebetween the substrate and the coating.

The mean coating composition values found via this technique are inagreement with those measured by microprobe (EPMA, Electron ProbeMicro-Analyzer): as weight percentages relative to the total mass of thewafer, 90% of Cr, slightly less than 10% of C and a few % of O, whichcorresponds in atomic percentages to a composition close to Cr₇C₃.

The Transmission Electron Microscopy (TEM) images shown in FIGS. 2A and2B are acquired using a microscope (JEM 2100 sold by the company Jeol)equipped with a field emission gun operating at 200 kV: the zonesdelimited on these images confirm this result of the profile of FIG. 1,among others the presence of a layer of zirconium oxide ZrO₂ (zone b)with a thickness of less than 400 nm, which is at the interface betweenthe non-oxidized substrate (zone a) and the coating (zone c).

These results are confirmed by complementary analyses by EnergyDispersion Spectroscopy (EDS) which indicate a composition, in atomicpercentages, of about 40% of O and 60% of Zr on the oxidized interfacialzone as opposed to 5% of O and 95% of Zr on the non-oxidized zone of thesubstrate.

The formation of a passivation layer at the surface of the Zircaloy-4 isnormal in the absence of specific surface stripping. This layer maypossibly disappear in the course of the oxidation and temperatureincrease experiments.

The Zircaloy-4 substrate was already surface-oxidized on receipt. Noother source of oxidation could be identified during the phase ofdeposition of the chromium carbide protective layer. The sample thuscoated underwent no additional oxidation on conclusion of storage in airunder the ambient temperature conditions.

3.2. Resistance to Oxidation in Air at 800° C. of an Amorphous Si/CrCWafer

The silicon wafer covered with amorphous CrC manufactured according tothe conditions of Example 2.1 is subjected to aging in air at 800° C.for increasing times of 15, 30, 45, 60, 90, 120 and 180 minutes. Foreach temperature, the sample is cooled naturally and then analyzed byXRD at room temperature.

Analysis of the XRD spectra shows that, under air at 800° C.:

after 15 minutes of treatment, the same three phases seen previouslyappear: Cr₇C₃, Cr₃C₂ and Cr₂O₃. The amorphous phase appears to disappearsince no broad spread-out lump is visible at about 2 theta=30°;

after 90 minutes at 800° C., there is virtually no more Cr₂O₃, as if theoxygen had consumed all the chromium belonging to the carbides. Residualpeaks characteristic of Cr₃C₂ are still present, even after 180 minutesat 800° C.

These results indicate that the amorphous chromium carbide coatingwithstands oxidation in air at 800° C. for at least 15 minutes. Beyondthese conditions, it begins to be oxidized and to crystallize.

3.3. Resistance to Oxidation as a Function of the Temperature in Dry orHumid Air of Bare or Coated Zr or Mo Wafers

In order to study the resistance to oxidation in dry or humid air as afunction of the temperature, thermogravimetric analyses (TGA) areperformed on TGA wafers (dimensions: 6 mm×4 mm×1 mm, wafers pierced witha hole 1 mm in diameter and then suspended on the beam of the TGAbalance) of Zircaloy-4 or molybdenum coated by the manufacturing processof the invention with protective layers of various compositions(amorphous CrC, partially metastable Cr or amorphous Cr_(x)Si_(y)C_(z))and various thicknesses (9 μm, between 5 μm and 6 μm, or between 2 μmand 3 μm).

The deposition conditions are those of Table 1 for the correspondingprotective layers which cover all the faces of the wafers. Theseconditions are completed by the following specific parameters:

amorphous CrC: T=450° C. and P=6700 Pa;

partially metastable Cr: T=400° C.;

amorphous CrxSizCy: T=500° C.

These analyses consist in gradually heating each sample from 25° C. to1200° C. at a temperature increase rate of 40° C./minute, and then inmaintaining a temperature of 1200° C.

They are performed with dry or humid air (27.5% relative humidity).

The progress of the oxidation of each sample is evaluated by measuringits gain in mass (due to the formation of oxide).

For comparative purposes, each analysis is repeated on a wafer without aprotective layer.

3.3.1. Results for an Amorphous Zr/CrC Wafer

Zircaloy-4 wafers of various thicknesses (2 μm, 5 μm or 9 μm) eachcovered with a protective layer of amorphous CrC are subjected to TGAanalysis in air between 25° C. and 1200° C. For comparative purposes, anuncoated Zircaloy-4 wafer is subjected to the same analysis.

As illustrated in FIGS. 3A (dry air) and 3B (humid air), during thetemperature increase from 25° C. to 1200° C. on a Zircaloy-4 substratecoated with amorphous CrC, the gains in mass change in an equivalentmanner in dry air or in humid air, irrespective of the thickness of theprotective layer.

On the other hand, in comparison, the extent of the oxidation is muchless than that for the bare substrate: the coated substrate gains onlyabout 0.15% in mass as opposed to about 3% mass for the bare substrate,i.e. 20 times more.

During the temperature stage at 1200° C., the three Zircaloy-4substrates coated with amorphous CrC become gradually oxidized overtime. This slowing-down in catastrophic oxidation at and beyond whichthe substrate disintegrates is smaller for the humid air atmospherewhich is the more oxidizing (FIG. 3D) relative to the dry air (FIG. 3C),but advantageously increases with the thickness of the protective layer.

XRD analyses appear to indicate that three crystalline phases coexist inthe coating: crystalline Cr₂O₃, amorphous chromium oxides and amorphouschromium carbide CrC.

In comparison, the bare substrate becomes immediately oxidized to ZrO₂.

The oxygen penetration is thus total in the bare substrate, whereas itis blocked or greatly limited up to 900° C. Above this temperature, itbecomes partial and gradual in the coated substrates, since theamorphous CrC coating slows down the oxidation kinetics.

The amorphous CrC coating thus indeed protects against and/or delays theoxidation of the Zircaloy-4 substrate during heating from 25° C. to1200° C., even in humid air. This beneficial effect increases with thethickness of the coating.

3.3.2. Results for an Amorphous Mo/CrC Wafer

Molybdenum wafers of various thicknesses (2 μm or 5 μm) each coveredwith a protective layer of amorphous CrC are subjected to TGA analysisin air between 25° C. and 1200° C. For comparative purposes, an uncoatedmolybdenum wafer is subjected to the same analysis.

As illustrated in FIGS. 4A (dry air) and 4B (humid air), during thetemperature increase from 25° C. to 1200° C. on a molybdenum substratecoated with amorphous CrC, the gains in mass change less quickly in dryair than in humid air, which is a more oxidative atmosphere. Moreover,the thicker the amorphous CrC coating, the later the sample becomesoxidized and the more it is capable of withstanding high temperature: upto about 1000° C. for a 2 μm coating, or even more than 1100° C. for a 5μm coating.

The resistance to oxidation for greater thicknesses of the amorphous CrCcoating could not be tested: it should nevertheless change favorably.

In comparison, the bare molybdenum substrate becomes oxidizedimmediately in dry or humid air: above 600° C. after a gain in mass dueto the formation of molybdenum oxide, the bare substrate is then totallydestroyed by formation of volatile oxides, which leads to rapid andnegative losses of mass.

Since the various samples are rapidly destroyed at a temperature of1200° C., the corresponding isothermal TGA analysis is not illustrated.

The amorphous CrC coating thus indeed protects against and/or delays theoxidation of the molybdenum substrate during heating from 25° C. to1100° C., even in humid air. This beneficial effect increases with thethickness of the coating.

3.3.3. Results for a Partially Metastable Zr/Cr Wafer

Zircaloy-4 wafers are each covered with nine protective layers ofpartially metastable Cr so as to form multilayer coatings of differentthicknesses (4 μm or 6 μm).

The stack of the nine protective layers is made by injecting the mothersolution for 15 minutes and then stopping it for 5 minutes: a multilayercoating is thus obtained by repeating this deposition/pause cycle ninetimes.

The resumption of injection after the 5-minute pause creates aninterface which may be visualized by TEM analysis of the multilayercoating.

This avoids the columnar growth and densifies the coatings.

The coated wafers are subjected to TGA analysis in air between 25° C.and 1200° C. For comparative purposes, an uncoated Zircaloy-4 wafer issubjected to the same analysis.

As illustrated in FIGS. 5A (dry air) and 5B (humid air), during thetemperature increase from 25° C. to 1200° C. on a Zircaloy-4 substratecoated partially metastable Cr, the gains in mass change in anequivalent manner in dry air or in humid air, irrespective of thethickness of the protective layer.

On the other hand, in comparison, the extent of the oxidation is smallerthan that for the bare substrate: the substrate coated with partiallymetastable Cr gains only about 0.8% in mass as opposed to about 3% massfor the bare substrate (i.e. 3.75 times more), which is neverthelessless protective than the amorphous CrC coating analyzed previously witha gain in mass equal to 0.15%.

During the temperature stage at 1200° C., the two Zircaloy-4 substratescoated with partially metastable Cr become gradually oxidized over timeas illustrated by FIGS. 5C (dry air) and 5D (humid air). Compared withwhat was found with the amorphous Zr/CrC wafer (Example 3.3.1), themultilayer coating of partially metastable Cr shows in the first secondsa delay of oxidation in comparison with the bare substrate, rapidlyfollowed by an acceleration of this oxidation.

The origins of this unfavorable acceleration at 1200° C. relative to thebare substrate have not yet been entirely elucidated. At this stage,various hypotheses are being studied with a view to optimizing theprotective effect of the partially metastable Cr coating with respect tooxidation.

However, advantageously, even at 1200° C., the partially metastableZr/Cr wafer shows less substantial desquamation than the bare Zr wafer,which ensures better mechanical strength.

XRD analyses indicate that, on conclusion of the temperature stage at1200° C., all of the partially metastable Cr coating is oxidized toCr₂O₃ and the substrate to ZrO₂.

The partially metastable Cr coating greatly prevents or greatly limitsthe penetration of oxygen up to about 900° C., above which temperaturethis penetration becomes partial and gradual.

The partially metastable Cr coating thus indeed protects against and/ordelays the oxidation of the Zircaloy-4 substrate.

3.3.4. Results for a Zr/Cr_(x)Si_(y)C_(z) Wafer

A Zircaloy-4 wafer 4 μm thick covered with a protective layer ofamorphous mixed chromium silicon carbide Cr_(x)Si_(y)C_(z) is subjectedto TGA analysis in dry or humid air between 25° C. and 1200° C. with atemperature stage at 1200° C. For comparative purposes, an uncoatedZircaloy-4 wafer is subjected to the same analysis, the oxidation in dryor humid air giving, in this case, identical results.

As illustrated in FIG. 6A (25° C. to 1200° C.), the gain in mass changessimilarly in dry air or in humid air for the Zircaloy-4 substrate coatedwith amorphous mixed chromium silicon carbide Cr_(x)Si_(y)C_(z): theoxidation is delayed up to 700° C. in humid air and 800° C. in dry air.In comparison with the bare substrate, the coated substrate shows betterresistance to oxidation.

FIG. 6B (stage at 1200° C.) logically shows better resistance tooxidation in dry air than in humid air of the Zircaloy-4 substratecoated with amorphous mixed chromium silicon carbide Cr_(x)Si_(y)C_(z),without, however, improving this property relative to the baresubstrate.

However, advantageously, even at 1200° C., the Zr/Cr_(x)Si_(y)C_(z)wafer shows less substantial cracking and swelling than the bare Zrwafer, which ensures better mechanical strength.

XRD analyses indicate that, on conclusion of the temperature stage at1200° C., all of the amorphous mixed chromium silicon carbideCr_(x)Si_(y)C_(z) coating is oxidized (among others to Cr₂O₃ forchromium) and the substrate to ZrO₂.

The amorphous mixed chromium silicon carbide Cr_(x)Si_(y)C_(z) coatingthus indeed protects against and/or delays the oxidation of theZircaloy-4 substrate. Its resistance to oxidation and its mechanicalstrength are of intermediate magnitude relative to those of amorphousCrC and of partially metastable Cr.

3.3.5. Evaluation of the Resistance to Oxidation and to Hydriding AfterExposure of a Zr/CrC Wafer to 1100° C. Followed by Quenching in Water

Zircaloy-4 wafers (dimensions: 45 mm×14 mm×1 mm) of three differentthicknesses (2 μm to 3 μm, 5 μm to 6 μm, or 9 μm) each covered with aprotective layer of amorphous CrC as used in Example 3.3.1 are oxidizedin dry air for 14 minutes, and then subjected to quenching in water for10 seconds.

The Scanning Electron Microscopy (SEM) images of a 9 μm section of thewafer resulting from this treatment are shown in FIGS. 7A and 7B (zoominto a corner of the wafer): although the substrate has a rough finish,i.e. it has a certain surface roughness, the coating is of uniformthickness and it perfectly covers all the unevennesses. The mechanicalstrength of the wafers is also preserved.

The absence of degradation of the Zircaloy-4 on conclusion of this testat 1100° C. with quenching in water is coherent with the oxidation ofZircaloy-4 which increases as a function of the temperature and issignificant only at and above 1200° C. (Example 3.3.1). The lowertemperature (1100° C.) and the short time (14 minutes) are such that theoxidation is limited here to the coating (see FIGS. 7A and 7B) whichensures good protection of the Zircaloy-4.

In accordance with GDS profiles not shown herein, three main layers ofdifferent chemical composition may be identified on the SEM images ofFIGS. 7A and 7B, i.e. going from the external medium to the Zircaloy-4substrate:

an outer layer of oxidized coating about 4 μm thick comprising a zone Aof 2 μm of surface chromium oxides (Cr₂O₃) and a zone B of 2 μm ofpartially oxidized coating (Cr₃C₂ resulting from the recrystallizationof the amorphous CrC during the temperature increase+Cr₂O₃);

an intermediate layer comprising a zone C of non-oxidized coating(amorphous CrC) at the interface with the outer coating and with a zoneD formed from chromium and carbon which has diffused into the Zircaloy-4with which it is at the interface (with possible formation of cubiczirconium carbide ZrC with a lattice parameter of about 4.7 Å, inparticular for the thinnest coating of 2 μm to 3 μm);

a layer formed from Zircaloy-4 (zone E).

The amorphous CrC coating thus protects the Zircaloy-4 substrate withrespect to oxidation for the three wafers, since no formation of ZrO₂ isdetected. Only the coating is partially oxidized to Cr₂O₃.

Table 3 collates the thicknesses evaluated by GDS for zones A, B, C andD for the three Zr/CrC wafers, and also the corresponding overall gainsin mass.

TABLE 3 Zone D: Zone B: Thickness CrCO of Initial Zone A: transitiondiffusion thickness Thickness zone Zone C: zone in Gain in CrC Cr₂O₃thickness Thickness substrate mass (μm) (μm) (μm) CrC (μm) (μm) (mg ·cm⁻²) 9 1.5 2.5 3 15 0.414 5-6 1.5 2.5 2 11 0.543 2-3 1.5 2.5 1 6 0.288

Table 3 is completed by FIG. 7C which groups the SEM images of a crosssection for each of the three wafers, given that the total thickness ofthe oxidized coating is greater than the thickness of the initialprotective coating. The SEM image of the wafer 5 μm to 6 μm thick showsa crack resulting from accidental rupture of the initial coating.

Table 3 and FIG. 7C show that the greater the thickness of the initialCrC coating, the thicker the non-oxidized coating (zone C) and thethicker also is the diffusion zone of the non-oxidized coating in thesubstrate (zone D)._On the other hand, the thickness of the oxidizedcoating (zone A) does not change: about 2 μm of Cr₂O₃ and 2 μm ofpartially oxidized transition zone (chromium oxycarbide) (zone B). Sincethe oxidation phenomenon is superficial, and since the oxidationconditions are the same, it is coherent that the thickness of Cr₂O₃ andof the transition zone should be identical insofar as the CrC coatinghas not all been consumed. The oxidation is partial depending on thethickness: less than half of the total thickness of the coating isoxidized for the thinnest coating (2 μm to 3 μm) and a quarter for thethickest (9 μm).

The gain in mass is greater for the wafer with a protective layer 9 μmthick, which is also illustrated by FIG. 7C which shows greater progressof the oxidation within the coating. The ratio of the gain in massbetween the wafers with a 9 μm coating and a 2-3 μm coating iscomparable to the ratio of the oxidized coating thicknesses: 1.44 versus1.59.

Complementary analyses show that the elemental compositions of thecoatings are comparable for each wafer in oxidized and non-oxidizedzones, with the curves reaching the same mass percentages and followingthe same trends. In particular, a diffusion of chromium and of carbon isobserved in the Zircaloy-4 substrate, among others in the form of ZrC,which advantageously reinforces the adhesion of the coating to thesubstrate.

Moreover, the non-oxidized coating zone C (amorphous CrC) maintains avery dense microstructure, formed from small grains of crystallinechromium carbides of submicron size.

As regards the resistance to hydriding, GDS analysis of the 9 μm thickwafer illustrated by FIG. 7D shows a mass percentage of hydrogen of 10ppm which is not significant in the Zircaloy-4 substrate after oxidationat 1100° C. followed by quenching in water, which confirms thehydrogen-permeation barrier property of the amorphous chromium carbidecoating.

Even under oxidative conditions at 1100° C. followed by quenching, anuclear component obtained via the manufacturing process of theinvention can maintain a certain degree of mechanical integrity and havea comfortable residual margin of resistance to oxidation/hydriding.

3.3.6. Conclusion

Unexpectedly, the inventors have discovered that a nuclear componentobtained by the manufacturing process of the invention has improvedresistance to oxidation and/or hydriding, in particular at high and veryhigh temperature, among others in the presence of water vapor.

Such properties cannot be anticipated with regard to the chemical andmetallurgical specificities of zirconium and of the zirconium alloysused for nuclear applications, among others with regard to theirchemical composition, surface state, crystalline texture, finalmetallurgical state (work-hardened or more or less recrystallized),which are properties that are liable to have an influence on the qualityand behavior of the coatings.

In particular, at low temperature, the α phase of a zirconium alloy(denoted “Zr-α”, of compact hexagonal crystalline structure) transformsinto the β phase (denoted “Zr-β”, of centered cubic crystallographicstructure) in a temperature range typically extending from 700° C. to1000° C. On passing from the Zr-α structure to the Zr-β cubic structure,the alloy undergoes local dimensional variations. These variations arein principle unfavorable to the mechanical strength of an outer layerwhich would cover a zirconium-based inner layer, on account among othersof the incompatibility of their expansion coefficients. These adhesiondifficulties are accentuated by the mechanisms of diffusion of chemicalspecies that are faster in the Zr-β phase than in the Zr-α phase, andwhich can modify the interface between the substrate and its coating.Now, the various protective layers deposited via the manufacturingprocess of the invention have shown very good adhesion to azirconium-based substrate, even under extreme conditions.

4. Microstructure of a Partially Metastable Si/Cr Monolayer orMultilayer Coating

A passivated silicon substrate is provided with a partially metastablechromium monolayer coating according to the conditions of Example 2.2,or with a multilayer coating of similar thickness and chemicalcomposition while additionally observing a waiting time of 5 minutesbetween the deposition of each of the nine constituent layers of themultilayer coating.

The microstructure of these coatings is illustrated by the SEM imagesrepresented by:

FIG. 8A: monolayer coating obtained with a deposition rate of 5 μm/hour;

FIG. 8B: monolayer coating obtained with a deposition rate of 3 μm/hour;

FIG. 8C: multilayer coating obtained with a deposition rate of 1μm/hour.

These images show that the monolayer coatings have here a columnarmicrostructure, whereas the multilayer coating has an equiaxedmicrostructure. FIG. 8C in particular shows the interface which existsbetween each of the nine layers which are visualized individually withinthe multilayer coating.

Moreover, the density of the coating increases gradually while reducingthe rate of deposition of the partially metastable chromium by reductionof the injection frequency and time. The density of the multilayercoating is estimated as 7.7±0.6 g·cm⁻³ via RBS (“RutherfordBackscattering Spectrometry”) analyses: taking the uncertainties intoaccount, it is thus of the same order of magnitude as the optimumdensity of 7.2 g·cm⁻³ for the stable solid chromium.

The deposition conditions thus have an influence on the microstructureof the coating and on its density. In general, the quality of a coatingis inversely proportional to its deposition rate, as shown by theevolution from a porous columnar growth to a dense equiaxed growthobtained by reducing the deposition rate. Reducing the deposition ratemay be obtained by reducing the deposition temperature, or by increasingthe deposition pressure or the precursor concentration of the mothersolution injected into the CVD deposition reactor.

5. Hardness of the Coatings

In order to measure the hardness of the coatings obtained previously orobtained under similar conditions, nanoindentation experiments areperformed. For the amorphous CrC coating, the hardness measurements areperformed on a coating obtained from fresh precursor (3.5 μm thick) orfrom precursor recycled under conditions similar to those presented inExample 6 (1 μm thick).

The nanoindentation machine is equipped with a Berkovich indenter(triangular-based pyramid with an angle of 65.27° between the verticaland the height of one of the faces of the pyramid). The measures aretaken in compliance with the rule of the tenth: the indenter drives inby less than one tenth of the thickness of the coating. A measurementcycle takes place in three stages:

increasing load up to the maximum load, in 30 seconds;

maintenance of the maximum load for 30 seconds;

removal of the load for 30 seconds.

The calculations made by the measurement and analysis software take intoaccount a Poisson coefficient of the coating of 0.2.

The results are collated in Table 4.

The parameters “H” and “E” are the hardness and the Young's modulus.

The parameters “H/E” and “H³/E²” evaluate the durability of the coating:

H/E: compares the elastic breaking strength or the abrasion resistancebetween different coatings.

H³/E²: characterizes the elastic behavior of a material and isproportional to the resistance to penetration under load and to theplastic deformation.

TABLE 4 Thickness Coating (μm) Substrate H (GPa) E (GPa) H/E (—) H³/E²(GPa) Cr_(x)C_(y) 3.5 Zircaloy-4 22.7 ± 2.3 266.5 ± 25.2 8.5 × 10⁻² 1.6× 10⁻¹ Cr_(x)C_(y) 1.0 Zircaloy-4 28.9 ± 6.4 315.0 ± 41.2 9.2 × 10⁻² 3.6× 10⁻¹ recycled Cr(S) 3.5 Zircaloy-4  9.7 ± 0.8 344.8 ± 32.0 2.8 × 10⁻²7.7 × 10⁻³ columnar Cr(S) 5.5 Zircaloy-4 16.9 ± 0.6 280.1 ± 72.7 6.0 ×10⁻² 6.2 × 10⁻² dense Cr_(x)Si_(z)C_(y) 5.5 Zircaloy-4 19.9 ± 2.8 180.8± 17.6 1.1 × 10⁻¹ 4.58 × 10⁻¹  Cr — —  6.1 ± 0.4 224.2 ± 21.4 2.7 × 10⁻²4.5 × 10⁻³ solid Zircaloy-4 — —  4.4 ± 0.4 108.8 ± 15.7 4.0 × 10⁻² 7.2 ×10⁻³ solid

For the various coatings, these results show that:

partially metastable Cr: this coating has a high hardness, of about 17GPa. This hardness is twice as high as that of the commerciallyavailable electrolytic hard chromium. It is in the high hardness rangeof solid metallic chromium, generally comprised between 6 GPa and 25 GPadepending on the production process.

amorphous chromium carbide CrC: this coating has an appreciably highhardness, comprised between 22 GPa and 29 GPa. The best hardnesses areobtained when the precursors not consumed on conclusion of themanufacturing process of the invention are recycled.

In comparison, the hardness range of a chromium carbide of the prior artgenerally ranges between 5 GPa and 24 GPa depending on the process usedand the deposition conditions.

The high hardness range of the amorphous chromium carbide coatingobtained via the manufacturing process of the invention is unexpected:it is generally accepted that a chromium carbide is much less hard inamorphous form than in crystalline form, or even that the presence ofcarbon would soften a chromium-based coating.

amorphous CrSiC: in comparison with the amorphous CrC coating, thiscoating has a hardness of about 20 GPa which is smaller, but,advantageously its Young's modulus of 180 GPa is much lower. Theamorphous CrSiC coating thus has a very high durability (H/E=11.1×10⁻²and above all H³/E²=4.6×10⁻¹ GPa), which competes with high-durabilitycoatings specially designed for this purpose.

6. Recycling of the Precursors

The example of a deposition process with recycling which follows istaken from patent application FR 1562862 (reference [11]). It relates tothe deposition of an amorphous chromium carbide coating on a siliconsubstrate and illustrates by analogy the possibility of recycling one ormore of the precursors or of derivatives thereof which remain onconclusion of the manufacturing process of the invention. The recyclingis performed with a cryogenic trap.

The deposition of an amorphous chromium carbide CrC coating is performedunder the following conditions:

Injection conditions:

-   -   injector open time: 0.5 ms    -   frequency: 10 Hz

Reagent: BEBC (5 g)

Solvent: Toluene (50 mL)

Carrier gas: N₂ (flow rate of 500 sccm, i.e. 500 cm³/min under standardconditions)

Deposition time: 20 minutes

Deposition temperature: 450° C.; Deposition pressure: 6666 Pa

Evaporation temperature: 200° C.

Temperature of the cryogenic trap: −120° C.

Amount of daughter solution recovered: 30 mL

Two experiments N1 and N2 were performed with a BEBC mother solution. Ina third experiment, the two daughter solutions obtained on conclusion ofN1 and N2 are recovered to form a recycled mother solution which is usedas source of precursor for a third deposition operation N3.

For N1 and N2, the thickness of the coating is typically 5 μm. A coatingabout 1.5 μm thick is obtained on conclusion of N3. The concentration ofBEBC is determined and the yield for N1 and N2 is calculated (see Table5).

TABLE 5 [BEBC] in [BEBC] in Yield the Daughter the relative Injectedinjected solution daughter to the Experiment solution solution recoveredsolution precursor No. (ml) (g/ml) (ml) (g/ml) (%) N1 55 0.078 30 0.03160% N2 50 0.083 30 0.034 59% N3 30 + 30 0.040 35 Not N/A measured, sincevery small

Complementary analyses show that the compositions and amorphousmicrostructures of the coatings do not depend on the precursorconcentration of the injected solution. On the other hand, a daughtersolution containing a recycled precursor makes it possible to deposit acoating with a hardness higher than that obtained with the initialprecursor of the mother solution.

7. Geometry of the Nuclear Component According to the Invention

The nuclear component obtained via the manufacturing process of theinvention is described on a cross section with reference to FIGS. 9A,9B, 9C, and 9D in the nonlimiting particular case of a tubular geometry.

When the nuclear component is solid or does not delimit any accessibleinternal volume, it generally does not comprise any coating deposited onthe inner surface of the substrate.

According to a first embodiment of the invention, the claddingillustrated by FIG. 9A comprises a substrate 1 whose inner surfacedelimits a volume that is capable of receiving the nuclear fuel. Thesubstrate 1 forms a support (not coated with an interposed layer forthis embodiment) on which is placed a protective layer 2 composed of aprotective material which improves the oxidation resistance of thecladding.

According to a second embodiment illustrated by FIG. 9B, the cladding isfurther provided with an interposed layer 3 placed between the substrate1 and the protective layer 2. In this case, the combination of thesubstrate 1 and of the interposed layer 3 forms the support. Theinterposed layer 3 is composed of at least one interposed material whichis capable of preventing or limiting the diffusion of the protectivematerial of the protective layer 2 toward the substrate 1.

According to a third embodiment illustrated by FIG. 9C, the claddingaccording to the second embodiment is further provided with an innerprotective layer 2B in contact with the internal volume of the claddingand arranged here on the inner face of the substrate 1 (thus not coatedwith a liner for this embodiment). The inner protective layer 2Bcompletes the protection imparted by the outer protective layer 2A.

According to a fourth embodiment illustrated by FIG. 9D, the claddingaccording to the third embodiment is further provided with a liner 4positioned between the inner protective layer 2B and the substrate 1.The liner 4 constitutes a diffusion barrier.

Needless to say, depending on the desired properties, other embodimentsare possible as a function of the presence or absence in each embodimentof the interposed layer 3, of the outer protective layer 2A, of theinner protective layer 2B and/or of the liner 4.

The present invention is in no way limited to the embodiments describedand represented, and a person skilled in the art will know how tocombine them and to make thereof, by means of his general knowledge,numerous variants and modifications.

REFERENCES CITED

-   [1] F. Maury, A. Douard, S. Delclos, D. Samelor, C. Tendero;    Multilayer chromium based coatings grown by atmospheric pressure    direct liquid injection CVD; Surface and Coatings Technology,    204 (2009) 983-987.-   [2] A. Douard, F. Maury; Nanocrystalline chromium-based coatings    deposited by DLI-MOCVD under atmospheric pressure from Cr(CO)6;    Surface and Coatings Technology, 200 (2006) 6267-6271.-   [3] WO 2008/009714-   [4] WO 2008/009715-   [5] S. Anderbouhr, V. Ghetta, E. Blanquet, C. Chabrol, F.    Schuster, C. Bernard, R. Madar; LPCVD and PACVD (Ti,Al)N films:    morphology and mechanical properties; Surface and Coatings    Technology, Volume 115, Issues 2-3, Jul. 18, 1999, pages 103-110.-   [6] F. Ossola, F. Maury; MOCVD route to chromium carbonitride thin    films using Cr (NEt2) 4 as single-source precursor: growth and    mechanism, Adv. Mater. Chem. Vap. Deposition, 3 (1997) 137-143.-   [7] Jin Mang, Qi Xue and Songxia Li, Microstructure and corrosion    behavior of TiC/Ti(CN)/TiN multilayer CVD coatings on high strength    steels. Applied Surface Science, 2013. 280: Pages 626-631.-   [8] A. Weber, C.-P. Klages, M. E. Gross, R. N. Charatan and W. L.    Brown, Formation Mechanism of TiN by Reaction of    Tetrakis(dimethylamido)-Titanium with Plasma-Activated Nitrogen.    Journal of The Electrochemical Society, 1995. 142(6): pages L79-L82.-   [9] Y. S. Li, S. Shimada, H. Kiyono and A. Hirose, Synthesis of    Ti—Al—Si—N nanocomposite films using liquid injection PECVD from    alkoxide precursors. Acta Materialia, 2006. 54(8): pages 2041-2048.-   [10] S. Abisset, F. Maury, E. Feurer, M. Ducarroir, M. Nadal and M.    Andrieux; Gas and plasma nitriding pretreatment of steel substrates    before CVD growth of hard refractory coatings; Thin Solid Films,    315 (1998) 179-185.-   [11] FR 1562862 filed on Dec. 18, 2015.

1. Process for manufacturing a nuclear component via the method ofchemical vapor deposition of an organometallic compound by direct liquidinjection (DLI-MOCVD), the nuclear component comprising: i) a supportcontaining a substrate based on a metal chosen from zirconium, titanium,vanadium, molybdenum or base alloys thereof (1), the substrate (1) beingcoated or not with an interposed layer (3) placed between the substrate(1) and at least one protective layer (2); ii) said at least oneprotective layer (2) coating said support and composed of a protectivematerial comprising chromium chosen from a chromium alloy, a carbide ofa chromium alloy, a chromium nitride, a chromium carbonitride, a mixedchromium silicon carbide, a mixed chromium silicon nitride, a mixedchromium silicon carbonitride, or mixtures thereof; the processcomprising the following successive steps: a) vaporizing a mothersolution containing a hydrocarbon-based solvent free of oxygen atoms, aprecursor of bis(arene) type comprising chromium; and containing, whereappropriate, an additional precursor, a carbon incorporation inhibitoror a mixture thereof; the precursors having a decomposition temperaturecomprised between 300° C. and 600° C.; b) in a chemical vapor depositionreactor in which is located said support to be covered and theatmosphere of which is at a deposition temperature comprised between300° C. and 600° C. and at a deposition pressure comprised between 13 Paand 7000 Pa; introducing the mother solution vaporized in step a), whichbrings about the deposition of said at least one protective layer (2) onsaid support.
 2. Process for manufacturing a nuclear component accordingto claim 1, wherein the substrate (1) is composed of zirconium or of azirconium-based alloy.
 3. Process for manufacturing a nuclear componentaccording to claim 1 or 2, wherein the interposed layer (3) is depositedon the substrate (1) by performing a DLI-MOCVD deposition or byplasma-enhanced chemical vapor deposition (CVD).
 4. Process formanufacturing a nuclear component according to claim 3, wherein theinterposed layer (3) is deposited on the outer surface of the substrate(1) by performing plasma-enhanced CVD deposition using a mixturecomprising least one titanium, aluminum or silicon halide and a gaseousnitrogen precursor.
 5. Process for manufacturing nuclear componentaccording to any one of the preceding claims, wherein the interposedlayer (3) comprises at least one interposed material chosen fromchromium, tantalum, molybdenum, tungsten, niobium, vanadium, alloysthereof, a titanium nitride, a titanium carbonitride, a mixed titaniumsilicon nitride, a mixed titanium silicon carbide, a mixed titaniumsilicon carbonitride, a mixed titanium aluminum nitride, or mixturesthereof.
 6. Process for manufacturing a nuclear component according toany one of the preceding claims, wherein the thickness the interposedlayer (3) is from 1 μm to 5 μm.
 7. Process for manufacturing a nuclearcomponent according to any one of the preceding claims, wherein thenuclear component further comprises a liner (4) placed on the innersurface of said support.
 8. Process for manufacturing a nuclearcomponent according to any one of the preceding claims, wherein said atleast one protective layer (2) is an outer protective layer (2A) whichcoats the outer surface of said support and/or, when the nuclearcomponent comprises an inner volume which is open or not open, an innerprotective layer (2B) which coats the inner surface of said supportcoated or not coated with the liner (4).
 9. Process for manufacturing anuclear component according to claim 7 or 8, wherein the liner (4) isdeposited, at a deposition temperature comprised between 200° C. and400° C., onto the inner surface of said support by chemical vapordeposition of an organometallic compound (MOCVD) or DLI-MOCVD with, asprecursor(s), a titanium amide and further a precursor comprisingsilicon, a precursor comprising aluminum and/or a liquid additivecomprising nitrogen if the material of which the liner is composedcomprises, respectively, silicon, aluminum and/or nitrogen.
 10. Processfor manufacturing a nuclear component according to any one of claims 7to 9, wherein the material of which the liner (4) is composed comprisesa titanium nitride, a titanium carbonitride, a mixed titanium siliconnitride, a mixed titanium silicon carbide, a mixed titanium siliconcarbonitride, a mixed titanium aluminum nitride, or mixtures thereof.11. Process for manufacturing a nuclear component according to any oneof claims 7 to 10, wherein the liner (3) has a thickness of from 1 μm to10 μm.
 12. Process for manufacturing a nuclear component according toany one of the preceding claims, wherein the inhibitor is achlorine-based or sulfur-based additive, free of oxygen atoms, and ofwhich the decomposition temperature is greater than 500° C.
 13. Processfor manufacturing a nuclear component according to any one of thepreceding claims, wherein the deposition temperature in step b) iscomprised between 350° C. and 550° C.
 14. Process for manufacturing anuclear component according to any one of the preceding claims, whereinthe deposition temperature in step b) is comprised between 300° C. and400° C.
 15. Process for manufacturing a nuclear component according toany one of the preceding claims, wherein the process comprises, afterstep b): c) performing on said at least one protective layer (2) atleast one step chosen from a subsequent treatment step of ionic orgaseous nitridation, ionic or gaseous silicidation, ionic or gaseouscarbosilicidation, or ionic or gaseous nitridation followed by ionic orgaseous silicidation or carbosilicidation.
 16. Process for manufacturinga nuclear component according to any one of the preceding claims,wherein the mother solution contains the precursor of bis(arene) typecomprising chromium, an additional precursor chosen from a precursor ofbis(arene) type comprising vanadium, a precursor of bis(arene) typecomprising niobium, a precursor comprising aluminum, or the mixture ofthese additional precursors; such that a protective material comprisinga chromium alloy chosen from a chromium/vanadium alloy, achromium/niobium alloy, a chromium/vanadium/niobium alloy or achromium/aluminum alloy is obtained in the presence of the inhibitor orsuch that a protective material comprising a carbide of the chromiumalloy chosen from a carbide of a chromium/vanadium alloy, a carbide of achromium/niobium alloy, a carbide of a chromium/vanadium/niobium alloyor a chromium/aluminum carbide is obtained in the absence of theinhibitor.
 17. Process for manufacturing a nuclear component accordingto any one of the preceding claims, wherein the mother solution containsthe precursor of bis(arene) type comprising chromium, a liquid precursorcomprising nitrogen as additional precursor being present in the mothersolution or a gaseous precursor comprising nitrogen being present in thechemical vapor deposition reactor; such that the protective materialcomprising a chromium nitride is obtained in the presence of theinhibitor or such that the protective material comprising a chromiumcarbonitride is obtained in the absence of the inhibitor.
 18. Processfor manufacturing a nuclear component according to any one of thepreceding claims, wherein the mother solution contains the precursor ofbis(arene) type comprising chromium, a precursor comprising silicon asadditional precursor; such that, at a deposition temperature comprisedbetween 450° C. and 500° C., the protective material comprising a mixedchromium silicon carbide is obtained.
 19. Process for manufacturing anuclear component according to any one of the preceding claims, whereinthe mixed chromium silicon carbide is amorphous.
 20. Process formanufacturing a nuclear component according to any one of the precedingclaims, wherein the mixed chromium silicon carbide is of “MAX phase”type.
 21. Process for manufacturing a nuclear component according toclaim 20, wherein the mixed chromium silicon carbide of “MAX phase” typeis chosen from a mixed carbide of formula Cr₂SiC, Cr₃SiC₂ or Cr₅Si₃C₂,or mixtures thereof.
 22. Process for manufacturing a nuclear componentaccording to any one of the preceding claims, wherein the mothersolution contains the precursor of bis(arene) type comprising chromium,a precursor comprising silicon as additional precursor, a liquidprecursor comprising nitrogen as additional precursor being present inthe mother solution or a gaseous precursor comprising nitrogen beingpresent in the chemical vapor deposition reactor; such that, at adeposition temperature comprised between 450° C. and 550° C., theprotective material comprising a mixed chromium silicon nitride isobtained in the presence of the inhibitor or such that the protectivematerial comprising a mixed chromium silicon carbonitride is obtained inthe absence of the inhibitor.
 23. Process for manufacturing a nuclearcomponent according to any one of the preceding claims, wherein themother solution further contains, as additional precursors, at least oneprecursor of bis(arene) type comprising an addition element chosen fromyttrium, aluminum, vanadium, niobium, molybdenum, tungsten, a precursorcomprising aluminum or yttrium as addition elements, or mixturesthereof; such that the protective material is doped with the additionelement.
 24. Process for manufacturing a nuclear component according toclaim 23, wherein the protective material comprises the addition elementin a content of from 1 atom % to 10 atom %.
 25. Process formanufacturing a nuclear component according to any one of the precedingclaims, wherein the precursor of bis(arene) type comprising chromium,the precursor of bis(arene) type comprising vanadium, the precursor ofbis(arene) type comprising niobium or the precursor of bis(arene) typecomprising the addition element comprise an element M, respectively,chosen from chromium, vanadium, niobium or the addition element; theelement M being in oxidation state zero (M₀) so as to have a precursorof bis(arene) type comprising the element M₀.
 26. Process formanufacturing a nuclear component according to any one of claim 4 to 6,9 to 11, 17 or 22, wherein the liquid precursor comprising nitrogen ishydrazine and/or the gaseous precursor comprising nitrogen is ammonia.27. Process for manufacturing a nuclear component according to any oneof claims 9 to 11 or 18 to 22, wherein the precursor comprising siliconis an organosilane compound.
 28. Process for manufacturing a nuclearcomponent according to any one of claim 4 to 6, 9 to 11, 16, 23 or 24,wherein the precursor comprising aluminum is a tri(alkyl)aluminum offormula AlR₃ in which R is chosen from CH₃, C₂H₅, C(CH₃)₃.
 29. Processfor manufacturing a nuclear component according to claim 23 or 24,wherein the precursor comprising yttrium istris(cyclopentadienyl)yttrium ortris[N,N-bis(trimethylsilyl)amide]yttrium.
 30. Process for manufacturinga nuclear component according to any one of the preceding claims,wherein the nuclear component comprises a zirconium-based substrate (1)and a protective layer (2) comprising mixed chromium silicon carbideCr_(x)Si_(y)C_(z).
 31. Process for manufacturing a nuclear componentaccording to any one of the preceding claims, wherein said at least oneprotective layer (2) has a composition gradient.
 32. Process formanufacturing a nuclear component according to any one of the precedingclaims, wherein said at least one protective layer (2) has an equiaxedstructure.
 33. Process for manufacturing a nuclear component accordingto any one of the preceding claims, wherein said at least one protectivelayer (2) has a density comprised between 90% and 100% of the density insolid form of the stable metallic chromium of centered cubiccrystallographic structure according to the Im-3m space group. 34.Process for manufacturing a nuclear component according to any one ofthe preceding claims, wherein said at least one protective layer (2) hasa hardness comprised between 15 GPa and 30 GPa.
 35. Process formanufacturing a nuclear component according to any one of the precedingclaims, wherein each of said at least one protective layer (2) has athickness of from 1 μm to 50 μm.
 36. Process for manufacturing a nuclearcomponent according to claim 35, wherein each of said at least oneprotective layer (2) has a thickness of from 10 μm to 50 μm.
 37. Processfor manufacturing a nuclear component according to any one of thepreceding claims, wherein several protective layers of identical ordifferent composition form, respectively, a homogeneous multilayerprotective coating or a heterogeneous multilayer protective coating. 38.Process for manufacturing a nuclear component according to claim 37,wherein the homogeneous multilayer protective coating comprisesprotective layers composed of the chromium alloy.
 39. Process formanufacturing a nuclear component according to claim 37, wherein theheterogeneous multilayer protective coating comprises protective layerscomposed of: chromium and chromium nitride, or mixed chromium siliconcarbide and chromium, or mixed chromium silicon carbide and chromiumnitride, or mixed chromium silicon nitride and chromium, or mixedchromium silicon nitride and chromium nitride, or mixed chromium siliconcarbide and mixed chromium silicon nitride.
 40. Process formanufacturing a nuclear component according to any one of the precedingclaims, wherein the nuclear component is a nuclear fuel cladding, aspacer grid, a guide tube, a plate fuel or an absorber rod.
 41. Nuclearcomponent comprising: i) a support containing a substrate based on ametal chosen from zirconium, titanium, vanadium, molybdenum or basealloys thereof (1), the substrate (1) being coated or not with aninterposed layer (3) placed between the substrate (1) and at least oneprotective layer (2); ii) said at least one protective layer (2) coatingsaid support and composed of a protective material comprising chromiumchosen from a chromium alloy, a carbide of a chromium alloy, a chromiumnitride, a chromium carbonitride, a mixed chromium silicon carbide, amixed chromium silicon nitride, a mixed chromium silicon carbonitride,or mixtures thereof.
 42. Nuclear component according to claim 41,wherein the substrate (1) is composed of zirconium or of azirconium-based alloy.
 43. Nuclear component according to claim 41 or42, wherein the interposed layer (3) comprises at least one interposedmaterial chosen from chromium, tantalum, molybdenum, tungsten, niobium,vanadium, alloys thereof, a titanium nitride, a titanium carbonitride, amixed titanium silicon nitride, a mixed titanium silicon carbide, amixed titanium silicon carbonitride, a mixed titanium aluminum nitride,or mixtures thereof.
 44. Nuclear component according to any one ofclaims 41 to 43, wherein the thickness of the interposed layer (3) isfrom 1 μm to 5 μm.
 45. Nuclear component according to any one of claims41 to 44, wherein the nuclear component further comprises a liner (4)placed on the inner surface of said support.
 46. Nuclear componentaccording to any one of claims 41 to 45, wherein said at least oneprotective layer (2) is an outer protective layer (2A) which coats theouter surface of said support and/or, when the nuclear componentcomprises an inner volume which is open or not open, an inner protectivelayer (2B) which coats the inner surface of said support coated or notcoated with the liner (4).
 47. Nuclear component according to claim 45or 46, wherein the material of which the liner (4) is composed comprisesa titanium nitride, a titanium carbonitride, a mixed titanium siliconnitride, a mixed titanium silicon carbide, a mixed titanium siliconcarbonitride, a mixed titanium aluminum nitride, or mixtures thereof.48. Nuclear component according to any one of claims 45 to 47, whereinthe liner (4) has a thickness of from 1 μm to 10 μm.
 49. Nuclearcomponent according to any one of claims 41 to 48, wherein the chromiumalloy is chosen from a chromium/vanadium alloy, a chromium/niobiumalloy, a chromium/vanadium/niobium alloy or a chromium/aluminum alloy orthe carbide of the chromium alloy is chosen from a carbide of achromium/vanadium alloy, a carbide of a chromium/niobium alloy, acarbide of a chromium/vanadium/niobium alloy or a carbide of achromium/aluminum alloy.
 50. Nuclear component according to any one ofclaims 41 to 49, wherein the mixed chromium silicon carbide isamorphous.
 51. Nuclear component according to any one of claims 41 to50, wherein the mixed chromium silicon carbide is of “MAX phase” type.52. Nuclear component according to any one of claims 41 to 51, whereinthe mixed chromium silicon carbonitride or the mixed chromium siliconnitride is amorphous.
 53. Nuclear component according to any one ofclaims 41 to 52, wherein the protective material is doped with anaddition element chosen from yttrium, aluminum, vanadium, niobium,molybdenum, tungsten, or mixtures thereof.
 54. Nuclear componentaccording to claim 53, wherein the protective material comprises theaddition element in a content of from 1 atom % to 10 atom %.
 55. Nuclearcomponent according to any one of claims 41 to 54, wherein the nuclearcomponent comprises a zirconium-based substrate (1) and a protectivelayer (2) comprising mixed chromium silicon carbide Cr_(x)Si_(y)C_(z).56. Nuclear component according to any one of claims 41 to 55, whereinsaid at least one protective layer (2) has a composition gradient. 57.Nuclear component according to any one of claims 41 to 56, wherein saidat least one protective layer (2) has an equiaxed structure.
 58. Nuclearcomponent according to any one of claims 41 to 57, wherein said at leastone protective layer (2) has a density comprised between 90% and 100% ofthe density in solid form of the stable metallic chromium of centeredcubic crystallographic structure according to the Im-3m space group. 59.Nuclear component according to any one of claims 41 to 58, wherein saidat least one protective layer (2) has a hardness comprised between 15GPa and 30 GPa.
 60. Nuclear component according to any one of claims 41to 59, wherein each of said at least one protective layer (2) has athickness of from 1 μm to 50 μm.
 61. Nuclear component according toclaim 60, wherein each of said at least one protective layer (2) has athickness of from 10 μm to 50 μm.
 62. Nuclear component according to anyone of claims 41 to 61, wherein several protective layers of identicalor different composition form, respectively, a homogeneous multilayerprotective coating or a heterogeneous multilayer protective coating. 63.Nuclear component according to claim 62, wherein the homogeneousmultilayer protective coating comprises protective layers composed ofthe chromium alloy.
 64. Nuclear component according to claim 62, whereinthe heterogeneous multilayer protective coating comprises protectivelayers composed of: chromium and chromium nitride, or mixed chromiumsilicon carbide and chromium, or mixed chromium silicon carbide andchromium nitride, or mixed chromium silicon nitride and chromium, ormixed chromium silicon nitride and chromium nitride, or mixed chromiumsilicon carbide and mixed chromium silicon nitride.
 65. Nuclearcomponent according to any one of claims 41 to 64, wherein the nuclearcomponent is a nuclear fuel cladding, a spacer grid, a guide tube, aplate fuel or an absorber rod.
 66. Use of a nuclear component as definedin any one of claims 41 to 65, for combating oxidation and/or hydriding,in a humid atmosphere comprising water.
 67. Use of a nuclear componentas defined in any one of claims 41 to 65, for combating hydriding in anhydrogenated atmosphere comprising hydrogen.
 68. Use for combatingoxidation and/or hydriding according to claim 66 or 67, wherein thehumid atmosphere or the hydrogenated atmosphere is at a temperaturecomprised between 800° C. and 1200° C.
 69. Use for combating oxidationand/or hydriding according to any one of claims 66 to 68, followingquenching in water of the nuclear component.